The dependence of lasing wavelength on cavity length has been systemically studied in strained-layer single, double, and triple quantum-well InGaAs lasers. Lasing from the second quantized state has been observed for the first time in double and triple quantum-well lasers. A wide range (∼500 Å) wavelength switching between the first and second quantized states has been demonstrated by controlling the injection current and/or the operation temperature.
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
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