A correlation between the lattice parameter and the carbon concentration in otherwise pure samples of silicon has been observed. Carbon content has been determined by mass spectrometry, infrared, and lattice parameter measurements. Typical values of the carbon concentration are given for some float-zoned silicon crystals and for a series of intentionally carbon-doped crystals.
The oxygen and carbon content of several silicon single crystals have been measured using 8He activation techniques and are compared with values determined from infrared absorption measurements. The oxygen and carbon content of these crystals as determined from the activation analysis ranged from <0.05 to 28 ppm and <0.05 to 7 ppm, respectively. The infrared absorption measurements gave results that agreed with the activation analysis to within ~40%.Infrared absorption spectrophotometry has been used to determine the oxygen and carbon content of monocrystalline silicon (1-3). This method is particularly attractive because it has a sensitivity in the ppba (parts per billion atomic) range and it is inexpensive, quick, and nondestructive. However, questions regard-* Electrochemical Society Active Member.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-11 to IP
Dislocation-free silicon web crystals have been grown reproducibly in the thickness range of 15 to 45 μ and approximately 4 to 8 mm wide. Phosphorus, arsenic, and boron were used as dopants to achieve controlled resistivities from 0.05 to 20 Ω-cm.
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