Growth of Dislocation-Free Silicon Web Crystals

Tucker, T. N.; Schwuttke, G. H.

doi:10.1063/1.1754720

Cited by 14 publications

(4 citation statements)

References 4 publications

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“…The observation of perfect dislocations lying in ~112~ and ~1 1 0 ~ directions agrees with earlier results obtained from etch pitting and x -r a y topogr a p h y (5,6,17). The partial dislocation networks confined to the twin boundaries, however, have not p r eviously been identified.…”

Section: Discussionsupporting

confidence: 89%

“…The generation of self-interstitials during oxidation of silicon is attributed to incompleteness of the oxidation process (1,7,14) or to interracial stress (15). However, both the growth of OSF as well as OED indicate that the supersaturation of interstitials is not linearly related to the oxidation rate, X, but rather that a power law relationship exists (9,16,17): he oc :~n, where n ~ 0.5. Three different theories that have been proposed to explain this relationship are briefly outlined at the end of this paper.…”

Section: Discussionmentioning

confidence: 98%

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Electron Microscopy of WEB‐Dendritic Silicon

Cunningham

Strunk

Ast

1982

J. Electrochem. Soc.

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FLAWS IN Fig. 10. Schematic representation of a polysilicon deformation process, caused by the stress from an oxide wedge. The process depicted consists of two consecutive stress buildup/slip cycles.Both mechanisms are dependent on the growth rate of the oxide, the rate of volume expansion, and the rate of viscoelastic flow of the oxide. The most unforgiving condition will be for a high poly I doping concentration and a low t e m p e r a t u r e steam oxidation. ConclusionRAM devices employing double polysilicon structures, with insulating oxides grown at low t e m p e r atures (e.g., 80O~ m a y be degraded by flaws in the sidewall oxides. Two mechanisms are proposed b y which two types of sidewall flaws are generated; both ABSTRACT The dislocation structure of WEB silicon ribbon is investigated using high-voltage transmission electron microscopy and scanning electron microscopy in the beam-induced current mode (EBIC). A high density dislocation network is present near the twin boundary region contained in the web and consists of perfect and partial dislocations. In particular straight dislocations lying in <110> directions can be Lomer-Cottrell locks, but are more frequently perfect glide or partial dislocations. 1 Permanent address: Max Planck I n s t i t u t fiir M e t a l l f o r s c h u n g , I n s t i t u t fiir P h y s l k , 76~0 S t u t t g a r t 80, G e r m a n y .

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Section: Discussionsupporting

confidence: 89%

Section: Discussionmentioning

confidence: 98%

Electron Microscopy of WEB‐Dendritic Silicon

Cunningham

Strunk

Ast

1982

J. Electrochem. Soc.

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“…O'Hara and Bennett (3) proposed that web flatness, or rather lack of flatness, is governed by two-dimensional nucleation at the liquid meniscus-web interface so that a localized reduction in undercooling should reduce the rate of nucleation and promote flatness. Furthermore, O'Hara (4) and Tucker and Schwuttke (5) have noted that low or dislocation-free web could be grown. Our primary interest was to determine the relationships between heat sources and sinks and the crystallographic factors that determine web morphology and perfection.…”

mentioning

confidence: 99%

Growth of Wide, Flat Crystals of Silicon Web

Barrett¹,

Myers²,

Hamilton³

et al. 1971

J. Electrochem. Soc.

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“…Although numerous investigators have compared the physical and chemical properties of web material with those of conventional ingot material (Tucker andSchwuttke 1966, O'Hara 1964, Fisher andAmick 19GG), no previous comparison of the electrical properties of the interface for oxidized web has been reported. 5 2.…”

mentioning

confidence: 98%