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Normal incidence x-ray standing wave ͑NIXSW͒ experiments have been performed for monolayers of 3,4,9,10-perylene-tetracarboxylic-dianhydride ͑PTCDA͒ adsorbed on the Ag͑111͒ surface. Two phases were analyzed: the low-temperature phase ͑LT phase͒, which is disordered and obtained for deposition at substrate temperatures below 150 K, and the ordered phase, which is obtained for deposition at room temperature ͑RT phase͒. From the NIXSW analysis the vertical bonding distances to the Ag surface were obtained for the averaged carbon atoms and the two types of chemically different oxygen atoms in the terminal anhydride groups. For the LT phase, we find about 2% ͑0.05 Å͒ and 8% ͑0.21 Å͒ smaller averaged bonding distances for the C and O atoms, respectively, compared to the RT phase. In both phases, the planar geometry of the free molecule is distorted; in particular, the carboxylic O atoms are closer to the surface by 0.20 Å ͑RT͒ and 0.31 Å ͑LT͒ with respect to the averaged C distance. The difference between the vertical bonding distances of the carboxylic and anhydride O atoms is found to be 0.32 ͑RT͒ and 0.33 Å ͑LT͒. These structural parameters of the two phases are compared to those of PTCDA monolayers adsorbed on Au͑111͒ and Cu͑111͒ surfaces and are discussed in the frame of current bonding models.

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Combining electrochemical methods, in situ scanning tunneling microscopy, and surface x-ray diffraction allowed study of the structure and kinetics of S/Au(111) electrodes in aqueous electrolytes under potential control. Integrated intensities of a particular crystal truncation rod at anti-Bragg conditions were used to trace the sulfur adsorption and desorption as a function of electrode potential in real time. The S desorption is a first order process and the adsorption follows a Langmuir isotherm. A weakly bound S layer is found on the surface before charge transfer, and then specific adsorption occurs.

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Pr 2 O 3 grown heteroepitaxially on Si(001) is a promising candidate for applications as a high-k dielectric in future silicon-based microelectronics devices. The technologically important thickness range from 1to10nm has been investigated by synchrotron radiation-grazing incidence x-ray diffraction. The oxide film grows as cubic Pr2O3 phase with its (101) plane on the Si(001) substrate in form of two orthogonal rotation domains. Monitoring the evolution of the oxide unit-cell lattice parameters as a function of film thickness from 1to10nm, the transition from almost perfect pseudomorphism to bulk values is detected.