Initial stages of the epitaxial growth of Pr2O3 on Si(111) studied by LEED and STM

Libralesso, L.; Schroeder, Thomas; Lee, T.-L.; Zegenhagen, J.

doi:10.1016/j.susc.2005.08.026

Cited by 12 publications

(18 citation statements)

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“…An average periodicity of 0.6 ± 0.1 nm can be deduced from the observed growth oscillations. This result is well in line with previous studies on Pr 2 O 3 films on Si(1 1 1), where it was reported that Pr 2 O 3 grows in a (0 0 0 1) oriented hexagonal (hex) structure phase with a unit cell height in the growth direction of 0.601 nm [15,17].…”

Section: Rheedsupporting

confidence: 93%

“…Using similar techniques, Jeutter et al succeeded to solve the atomic structure of the hex-Pr 2 O 3 (0 0 0 1)/ Si(1 1 1) interface [16]. In addition, the initial stages of the Pr 2 O 3 growth on Si(1 1 1) from the formation of the first islands towards the closing of the first monolayer was monitored by STM and LEED [17]. However, no studies were reported on the chemical composition and the growth behaviour of thin Pr 2 O 3 films on Si(1 1 1) so far.…”

Section: Introductionmentioning

confidence: 99%

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Heteroepitaxial praseodymium sesquioxide films on Si(111): A new model catalyst system for praseodymium oxide based catalysts

et al. 2007

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Section: Rheedsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial praseodymium sesquioxide films on Si(111): A new model catalyst system for praseodymium oxide based catalysts

et al. 2007

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“…This preference of the high temperature hex-Pr 2 O 3 with respect to the room temperature cub-Pr 2 O 3 phase can be attributed to an epitaxial stabilization given by the far better lattice matching. The hex-Pr 2 O 3 (0001) layers were intensively investigated by analyzing the oxide/Si(111) interface structure [43], studying the initial oxide growth behaviour with STM & LEED [44] as well as with XPS, UPS & RHEED [41]. Furthermore, Synchrotron radiation X-ray diffraction was applied to study with high resolution and sensitivity the relaxation process from pseudomorphism to bulk behaviour [45].…”

Section: Contributedmentioning

confidence: 99%

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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Engineered Si wafer systems present an important materials science approach to further improve the performance of Si‐based micro‐ and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer technology platform which are otherwise too expensive or even impossible to grow in bulk form in the required quality and quantity. Ge is attracting increasing research interest because it is for example a promising material for high mobility channel CMOS technologies as well as a mediator material to achieve the manufacturing of III‐V/Si hybrid devices. The integration of Ge on Si wafers is today either achieved by a combination of layer transfer and wafer bonding techniques or by a sequence of subsequent, epitaxial thin film deposition growth steps. In the latter case, the traditional approach to integrate Ge layers of low defect densities is given by the use of compositionally graded SiGe heterostructures. As this approach suffers however from required SiGe buffer thicknesses on the micrometer scale, making integrated circuit processing difficult, research on the development of innovative buffer heteroepitaxy approaches is intensively pursued. A new interesting class of buffer materials with a high degree of flexibility is given by oxide heterostructures. Using the integration of single crystalline Si and Ge on the Si(111) material platform via oxide heterostructures as an example, the flexibility of engineered oxide heterostructures to control important epitaxy parameters is demonstrated. In this study, epitaxial Si(111) and Ge(111) layers were grown on cubic Y2O3(111)/cubic Pr2O3(111)/Si(111) and Pr2O3(111)/Si(111) support systems, respectively. The structural properties of the Si‐on‐Insulator (SOI) and Ge‐on‐Insulator (GOI) heterostructures were characterized in detail by a combination of laboratory‐ and synchrotron‐based methods. As main result, both the epitaxial Si(111) and Ge(111) films were shown to be atomically smooth and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Pure praseodymium oxides were for example grown on Si(111) substrates for microelectronic applications [24,25]. Under UHV oxygen deficient conditions, praseodymium prefers the Pr 3 þ state and the hexagonal (0001) oriented (hex) Pr 2 O 3 lattice on Si(111) [24][25][26][27][28]. A preparation method was found to induce a phase transformation from hex-Pr 2 O 3 (0001) films to single crystalline cubic (cub) Pr 2 O 3 (111) films on Si(111) [29,30].…”

Section: Introductionmentioning

confidence: 99%

Stoichiometry–structure correlation of epitaxial Ce1−Pr O2− (x=0−1) thin films on Si(111)

Zoellner¹,

Zaumseil²,

Wilkens³

et al. 2012

Journal of Crystal Growth

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Initial stages of the epitaxial growth of Pr2O3 on Si(111) studied by LEED and STM

Cited by 12 publications

References 10 publications

Heteroepitaxial praseodymium sesquioxide films on Si(111): A new model catalyst system for praseodymium oxide based catalysts

Heteroepitaxial praseodymium sesquioxide films on Si(111): A new model catalyst system for praseodymium oxide based catalysts

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Stoichiometry–structure correlation of epitaxial Ce1−Pr O2− (x=0−1) thin films on Si(111)

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