The properties of a highly selective chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H202:CH3COOH) is investigated in etching SiGe/Si heterostructures. This solution has been found to etch Si~_= Ge~ much faster than Si over the entire range of Ge contents. The etch rate dependences are presented as functions of solution composition, Ge content, dopant type, diluent type, temperature, and stirring. Both n-type and p-type Si~ =Ge= layers with Ge contents of 0 -< x -< 0.60 and 0 ~ x <-1.00, respectively, are investigated. It is found that the n-type samples etch at a faster rate than p-type for all Ge contents examined. When CH3COOH is used as the diluent instead of H20 a significant enhancement in the etch rate results for all concentrations of Ge studied. Also, the amount of H202 in the presence of CH3COOH has a significant effect on the magnitude of the etch rate as well as its behavior over time.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2014-11-26 to IP
A pseudomorphic Ge0.12Si0.88 film 265 nm thick grown on a Si (100) substrate by molecular beam epitaxy was implanted at room temperature with a dose of 1.5 × 1015 cm2 of 100 keV P ions. The projected range of the ions is about 125 nm, which is well within the film thickness. Only the top portion of the Ge0.12Si0.88 layer was amorphized by the implantation. Both implanted and non-implanted samples were subsequently annealed in vacuum for 30 Minutes from 400 °C to 800 °C. Values of electron Hall sheet mobility and concentration in the implanted Ge0.12Si0.88 epilayer were measured after annealing. The solid phase epitaxial regrowth is complete at 550 °C, where the implanted phosphorus reaches - 100 % activation. The regrown Ge0.12Si0.88 layer exhibits inferior crystalline quality to that of the virgin sample and is relaxed, but the non-implanted portion of the film remains pseudomorphic at 550 °C. When annealed at 800 °C, the strain in the whole epilayer relaxes. The sheet electron mobility values measured at room temperature in the regrown samples (Tann ≥ 550 °C) are about 20% less than those of pure Si.
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