In this paper, we present an approach of measuring the SET kinetics of redox-based resistive memories at timescales below 100 ps. Automatic measurements with an RF pulse generator and a source measure unit allow the consecutive application of short electrical pulses and the precise detection of the device resistance. In addition, a statistical evaluation of the SET kinetics has been performed. By increasing the pulse duration in small steps, varying the pulse amplitude and collecting a comprehensive dataset, the transient resistance of a device can be determined at a picosecond timescale. With this setup, we measured the SET kinetics of two different valence change memory-based resistive switching oxides, namely, TaOx and ZrOx, between 50 ps and 250 ps. Two characteristic times were measured: the SET time, being the delay after which the transition to the low resistance state sets in, and the transition time, which is the timespan during which the resistance shifts from the high to the low resistive state. We measured SET times down to 50 ps and transition times below 15 ps for both materials. The intrinsic maximum switching speed is not reached yet, which is limited by the ion migration in the oxides, possibly corresponding to the phonon THz frequency. Although charging times and heating times potentially slow down the measured SET times, they still allow 50 ps writing times at voltages of less than 5.0 V.
Using a direct imaging method, we experimentally investigate the reversal of magnetic islands in a bit-patterned media sample based on a pre-patterned substrate. Due to systematic variation of the island distances in the media, we are able to study the influence of the dipolar interaction on the switching-field distribution of the island ensemble. The experimental findings are explained by an analytical magnetostatic model that allows us to quantify the different components of the demagnetizing field in the system and to distinguish intrinsic and dipolar broadening of the switching-field distribution. Besides the well-known dipolar broadening due to stray fields from neighboring islands, we find strong influence from the magnetized trench material on the island switching.
In this paper, we want to review the correlation between filamentary (width) switching and the (SET) I–V characteristics by discussing the existing models.
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