In order to explain the empirical integer multiple rule for the stable mesons and baryons presented in the preceding paper we assume that the particles are held together in a cubic nuclear lattice. This is a novel approach to the particles, based on the fact that the range of the weak nuclear force is only a thousandth of the diameter of the nucleon, and that the crystals are the best-known macroscopic bodies held together by a microscopic force. We investigate the standing waves in a cubic nuclear lattice. From the frequency distribution of the waves follows that the masses of the γ-branch particles are integer multiples of m(π 0 ). We show that each particle has automatically an antiparticle. Assuming that the energy of the oscillations is determined by Planck's formula for the energy of a linear oscillator, it turns out that the π 0 meson and the other members of the γ-branch are like cubic black bodies filled with plane, standing electromagnetic waves. Our standing wave model explains the integer multiple rule of the masses of the neutral mesons and baryons of the γ-branch and uses nothing else but photons. Our results justify the cubic lattice assumption.
We demonstrate that surface plasmon oscillations excited at an adsorbate covered metal–vacuum interface can effectively couple to the electronic system of the adsorbed molecule. Using p-polarized light (hν=3.5 eV) incident at the surface plasmon resonant angle in Kretschmann’s attenuated-total-reflection (ATR) configuration, we observe a strong enhancement of the photodissociation rate of Mo(CO)6 from a 180 Å Al film, evaporated on a quartz prism in UHV.
A neural network will be used to identify stray signals in ionograms. The signals to be identified come from high‐frequency (HF, 2–30 MHz) transmitters that emit during the collection of the ionosonde data for the ionogram. Unfortunately, the ionosonde accepts the HF signals as valid and records them as data. The developed neural network correctly identifies 85% of the stray HF signals.
In this paper, in situ H., precleaning of bare and oxide patterned (1O0) Si substrates was studied at 800-1100~ and 5 Torr with base pressures of 1.5 x 1() -~ to 7 x 10 -~ Torr. The preclean can cause considerable surface damage due to enhanced etching, which strongly depends on process parameters such as base pressure and temperature. High preclean temperatures with low base pressures cause severe surface roughness, impacting subsequent film growth. Optimized preclean conditions produce damage-free surfaces. Preclean damage.' of oxide patterned substrates includes oxide consumption and surface pit formation. Surface morphology was characterized by Nomarski optical microscopy, electron microscopy, and optical reflectance. Our' results and explanations suggest that under proper conditions, enhanced etching can be used to significantly lower preclean temperatures and times without observable etching damage. We demonstrate that an 800~C H~ preclean for 15 and 60 s is sufficient for high quality Si epitaxial and selective epitaxial growth, respectively.
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