Lasers are recognized for coherent light emission, the onset of which is reflected in a change in the photon statistics. For many years, attempts have been made to directly measure correlations in the individual photon emission events of semiconductor lasers. Previously, the temporal decay of these correlations below or at the lasing threshold was considerably faster than could be measured with the time resolution provided by the Hanbury Brown/Twiss measurement set-up used. Here we demonstrate a measurement technique using a streak camera that overcomes this limitation and provides a record of the arrival times of individual photons. This allows us to investigate the dynamical evolution of correlations between the individual photon emission events. We apply our studies to micropillar lasers with semiconductor quantum dots as the active material, operating in the regime of cavity quantum electrodynamics. For laser resonators with a low cavity quality factor, Q, a smooth transition from photon bunching to uncorrelated emission with increasing pumping is observed; for high-Q resonators, we see a non-monotonic dependence around the threshold where quantum light emission can occur. We identify regimes of dynamical anti-bunching of photons in agreement with the predictions of a microscopic theory that includes semiconductor-specific effects.

Acoustic solitons formed during the propagation of a picosecond strain pulse in a GaAs crystal with a ZnSe/ZnMgSSe quantum well on top lead to exciton resonance energy shifts of up to 10 meV, and ultrafast frequency modulation, i.e., chirping, of the exciton transition. The effects are well described by a theoretical analysis based on the Korteweg-de Vries equation and accounting for the properties of the excitons in the quantum well.

We compare the asymmetry-induced exchange splitting δ1 of the bright-exciton ground-state doublet in self-assembled (In,Ga)As/GaAs quantum dots, determined by Faraday rotation, with its homogeneous linewidth γ, obtained from the radiative decay in time-resolved photoluminescence. Post-growth thermal annealing of the dot structures leads to a considerable increase of the homogeneous linewidth, while a strong reduction of the exchange splitting is simultaneously observed. The annealing can be tailored such that δ1 and γ become comparable, whereupon the carriers are still well confined. This opens the possibility to observe polarization entangled photon pairs through the biexciton decay cascade.PACS numbers: 71.36.+c, 73.20.Dx, 78.47.+p, Entangled photon pairs are a key requirement for the implementation of quantum teleportation schemes.[1] Typically, such photon pairs are created by parametric down conversion of a strongly attenuated laser beam in a non-linear optical crystal, with limited efficiency. Recently, the decay of a biexciton complex confined in a quantum dot (QD) has been suggested as an efficient source for polarization entangled photon pairs.[2] This concept was based on the assumption of an idealistic QD structure for which the valence band ground state has pure heavy hole character with angular momentum projections J h,z = ±3/2 along the heterostructure growth direction. When an electron-hole pair is injected, the momenta of the carriers become coupled by the exchange interaction. If the dot has perfect D 2d -symmetry, angular momentum is a good quantum number: the optically active states with momenta M = ±1 are degenerate, and their decay leads to emission of σ ± -circularly polarized photons.If the dot ground states are occupied by two electrons and two holes, each with opposite spin orientations, a spin singlet biexciton X 2 is formed, for whose decay two channels exist, as shown in Fig. 1 (upper panel left). The first photon is emitted with either σ + or σ − -polarization, and then the second photon with opposite polarization, as long as no spin flip occurs after the first process. Unless a polarization measurement is performed, the two photon polarization state is therefore described by2, forming an entangled state. A key requirement is that the photons emitted at each stage of the cascade are quasi-degenerate within their homogeneous linewidth, such that they cannot be distinguished by an energy measurement.Experiments have failed up to now to demonstrate such an entanglement, as only classical correlations were observed.[3] While some of the idealizations of the original proposal are well fulfilled, for example, for strongly confined self-assembled (In,Ga)As/GaAs quantum dots (such as the long exciton spin relaxation time as com- pared to the radiative lifetime [4], or the almost pure heavy-hole character of the valence band ground state [6]), a fundamental problem arises from the broken D 2d symmetry, which is reduced to at least C 2v or even lower symmetry in realistic dot structures. [7,8,...

Abstract:We present a detailed discussion of a recently demonstrated experimental technique capable of measuring the correlation function of a pulsed light source with picosecond time resolution. The measurement involves a streak camera in single photon counting mode, which is modified such that a signal at a fixed repetition rate, and well defined energy, can be monitored after each pulsed laser excitation. The technique provides further insight into the quantum optical properties of pulsed light emission from semiconductor nanostructures, and the dynamics inside a pulse, on the subnanosecond time scale. ©2010 Optical Society of America

We report experiments in which high quality silica opal films are used as three-dimensional hypersonic crystals in the 10 GHz range. Controlled sintering of these structures leads to well-defined elastic bonding between the submicrometer-sized silica spheres, due to which a band structure for elastic waves is formed. The sonic crystal properties are studied by injection of a broadband elastic wave packet with a femtosecond laser. Depending on the elastic bonding strength, the band structure separates long-living surface acoustic waves with frequencies in the complete band gap from bulk waves with band frequencies that propagate into the crystal leading to a fast decay.

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The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAsbased micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a non-exponential decay of the photoluminescence where the decay rate strongly depends on the excitation intensity. A microscopic theory of the quantum dot photon emission is used to explain both, the non-exponential decay and its intensity dependence. Also the transition from spontaneous to stimulated emission is studied.

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