In this work, polycrystalline silicon thin‐film transistors (poly‐Si TFTs) with 50‐nm nanowire (NW) channels fabricated without advanced photolithography by using a sidewall spacer formation technique are proposed for the first time. Because the poly gate electrode is perpendicularly across poly‐Si NW channels to form a tri‐gate‐like structure, the proposed poly‐Si NW TFT owns an outstanding gate controllability. In summary, a simple and low‐cost scheme is proposed to fabricate high‐performance poly‐Si NW TFT suitable for future display manufacturing and practical applications.
Main approach to obtain a multistabilized SmA LC device is to drive the orientations of the SmA LC through applying an in‐plane or an out‐plane electric field. To get better electric‐optical performances of the SmA LC device, an idea of the improvements on the electrode structure and the surface treatment of the cell is introduced here The experimental observations on the modification SmA LC device exhibit not only a high contrast ratio but also a low driving voltage.
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