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Low voltage current mirror (LVCM) based on floating gate MOSFET (FGMOS) has been presented in this paper. The LVCM has output current range of 100 nA to 500 pi, high output resistance (1.35 M O at 500 p4), high bandwidth (500 MHz) and low input compliance voltage (0.4 Vat 20 pi input current and 0.6 Vat 300 p4 input current). The LVCM design has been verified using P-Spice for 0 . 5~ technology and the error in current transfer is observed to be less than iW%. Simulations have also been carried out for P-type LVCM and bipolar L VCM.

This paper presents a high performance, resistively compensated low voltage current mirror using floating gate MOSFETs (FGMOS). The compensation technique desensitizes the output current and input compliance voltage with respect to the process generated variations in the threshold voltages of the mirroring transistors. Theoretical and simulation results exhibit an appreciable increase in bandwidth of the current mirror for this compensation technique. The operation of these circuits has been verified using PSpice simulations for 0.5 μm CMOS technology at a supply voltage of ±0.75 V.

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