The influence of the bias voltage on emission properties of a red emitting InP/GaInP quantum dot based single-photon source was investigated. Under pulsed electrical excitation, we can influence the band bending of the p-i-n diode with the applied bias voltage and thus the charge carrier escape by quantum tunneling. This leads to control over the non-radiative decay channel and allows carrier escape times as low as 40 ps, effectively reducing the time jitter of the photon emission. We realized high excitation repetition rates of up to 2 GHz while autocorrelation measurements with g(2)(0)-values of 0.27 attest dominant single-photon emission.
We present an optically addressed non-pixelated spatial light modulator. The system is based on reversible photoalignment of a LC cell using a red light sensitive novel azobenzene photoalignment layer. It is an electrode-free device that manipulates the liquid crystal orientation and consequently the polarization via light without artifacts caused by electrodes. The capability to miniaturize the spatial light modulator allows the integration into a microscope objective. This includes a miniaturized 200 channel optical addressing system based on a VCSEL array and hybrid refractive-diffractive beam shapers. As an application example, the utilization as a microscope objective integrated analog phase contrast modulator is shown.
In this letter, we report about mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. We found a good agreement between a simple analytical modeling of the mode structure and measurements, which allows to adjust the design of future devices. The quality factors show an analogous behavior as etched micropillars. The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes.
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