Abstract. We report on in-lab free space quantum key distribution (QKD) experiments over 40 cm distance using highly efficient electrically driven quantum dot single-photon sources emitting in the red as well as near-infrared spectral range. In the case of infrared emitting devices, we achieve sifted key rates of 27.2 kbit s −1 (35.4 kbit s −1 ) at a quantum bit error rate (QBER) of 3.9% (3.8%) and a g (2) (0) value of 0.35 (0.49) at moderate (high) excitation. (2) (0) value of 0.49. This first successful proof of principle QKD experiment based on electrically operated semiconductor single-photon sources can be considered as a major step toward practical and efficient quantum cryptography scenarios. Contents

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, where the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.

The implementation of a fully integrated Hadamard gate on one single chip is currently one of the major goals in the quantum computation and communication community. Prerequisites for such a chip are the integration of single-photon sources and detectors into waveguide structures such as photonic crystals or slab and ridge waveguide. Here, we present an implementation of a single-photon on-chip experiment based on a III-V semiconductor platform.Individual semiconductor quantum dots were used as pulsed single-photon sources integrated in ridge waveguides, and on-chip waveguide-beamsplitter operation is verified on the singlephoton level by performing off-chip photon cross-correlation measurements between the two output ports of the beamsplitter. A careful characterization of the waveguide propagation losses (∼ 0.0068 dB/µm) documents the applicability of such GaAs-based waveguide structures in more complex photonic integrated circuits. The presented work marks an important step towards the realization of fully integrated photonic quantum circuits including on-demand single-photon sources.

We demonstrate the simultaneous dressing of both vacuum-to-exciton and exciton-to-biexciton transitions of a single semiconductor quantum dot in a high-Q micropillar cavity, using photoluminescence spectroscopy. Resonant two-photon excitation of the biexciton is achieved by spectrally tuning the quantum dot emission with respect to the cavity mode. The cavity couples to both transitions and amplifies the Rabi-frequency of the likewise resonant cw laser, driving the transitions. We observe strong-field splitting of the emission lines, which depend on the driving Rabi field amplitude and the cavity-laser detuning. A dressed state theory of a driven 4-level atom correctly predicts the distinct spectral transitions observed in the emission spectrum, and a detailed description of the emission spectra is further provided through a polaron master equation approach which accounts for cavity coupling and acoustic phonon interactions of the semiconductor medium.

The influence of the bias voltage on emission properties of a red emitting InP/GaInP quantum dot based single-photon source was investigated. Under pulsed electrical excitation, we can influence the band bending of the p-i-n diode with the applied bias voltage and thus the charge carrier escape by quantum tunneling. This leads to control over the non-radiative decay channel and allows carrier escape times as low as 40 ps, effectively reducing the time jitter of the photon emission. We realized high excitation repetition rates of up to 2 GHz while autocorrelation measurements with g(2)(0)-values of 0.27 attest dominant single-photon emission.