We investigated the effect of the crystal thickness of the separate confinement heterostructure (SCH) guiding layers on the characteristics (threshold current, quantum efficiency) of 1550-nm loss-coupled Distributed Feedback laser diode fabricated with a simple step growth having an automatically buried absorptive grating InAsP layer. By increasing the thickness of SCH crystal layers from 40-nm to 80-nm in both below and above the multi-quantum well region, we could achieve lower threshold currents both in 25°C and 85°C with increased ratio of quantum efficiencies between two temperatures.
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