Reliability of loss‐coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Abstract

The authors achieved loss‐coupled 1.55 μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 106 h at room temperature. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 636–638, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22208

Lifetime Prediction of 1550 nm DFB Laser using Machine learning Techniques

“…probability scale depicted in figure 3 which yielded 1.8 × 10 5 hours for median lifetime 𝑡 𝑚 , defined as the point of the fitted line where 50% of devices failed the test, and 0.4 for the standard deviation 𝜎 calculated as ln (𝑡 𝑚 / 𝑡 1 ), where 𝑡 1 is the time corresponding to a cumulative failure of 16% [7]. Consequently, the 𝑀𝑇𝑇𝐹 1 is calculated as [7] 𝑀𝑇𝑇𝐹…”

“…Given a 𝑀𝑇𝑇𝐹 1 of 1.9 × 10 5 hours , the 𝑀𝑇𝑇𝐹 2 of the same device at a different junction temperature 𝑇 𝑗,2 can be estimated using the Arrhenius model [7]. Figure 5.…”