We report on the fabrication of high-performance ultra-thin-body (UTB) SnO2 thin-film transistors (TFTs) using microwave-irradiation post-deposition annealing (PDA) at a low process temperature (<100 °C). We confirm that the electrical characteristics of SnO2 TFTs become drastically enhanced below a body thickness of 10 nm. The microwave-annealed UTB SnO2 TFTs with a thickness of 5 nm exhibited increased optical transmittance, as well as remarkable transfer characteristics: a high mobility of 35.4 cm2 V−1 s−1, a drain current on/off ratio of 4.5 × 107, a steep subthreshold gate voltage swing of 623 mV/dec, and a clear enhancement-mode behavior. Additionally, the microwave-annealed SnO2 TFTs exhibited a better positive gate-bias stress/negative gate-bias stress immunity than thermally annealed SnO2 TFTs. Therefore, the thickness of the UTB SnO2 TFTs, as well as the microwave-annealing process, are both shown to be essential for transparent and flexible display technology.
Abstract-Solution-derivedamorphous indiumgallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below 300°C. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller V th shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.
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