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We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm-long NiO nanowire device operates under 2.5V and even a 25-μm-long NiO nanowire array operates under 20V. These results suggest the possibility of developing nanowire-based resistance memory devices.

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The present contribution reports the unlubricated friction and wear properties of Ti3SiC2 against steel. The fretting experiments were performed under varying load (1–10 N) and the detailed wear mechanism is studied using SEM‐EDS, Raman spectroscopy, and atomic force microscopy. Under the selected fretting conditions, Ti3SiC2/steel tribocouple exhibits a transition in friction as well as wear behavior with coefficient of friction varying between 0.5 and 0.6 and wear rate in the order of 10−5 mm3·(N·m)−1. Raman analysis reveals that the fretting wear is accompanied by the triboxidation with the formation of TiO2, SiO2, and Fe2O3. A plausible explanation for the transition in friction and wear with load is proposed.