2007
DOI: 10.1016/j.msea.2007.03.002
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Improved processing and oxidation-resistance of ZrB2 ultra-high temperature ceramics containing SiC nanodispersoids

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Cited by 189 publications
(112 citation statements)
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“…For a certain fixed volume fraction, smaller pores and better connectivity inside ZrO 2 (c) could enhance the collection and retention of the silica-rich liquid. Thus, nanoscale SiC particles might improve the oxidation resistance of ZrB 2 1SiC, 20 by refining the microstructure of the in situ formed ZrO 2 (c) skeleton.…”
Section: Thermochemical and Mechanical Stability Analysis Of The mentioning
confidence: 99%
See 1 more Smart Citation
“…For a certain fixed volume fraction, smaller pores and better connectivity inside ZrO 2 (c) could enhance the collection and retention of the silica-rich liquid. Thus, nanoscale SiC particles might improve the oxidation resistance of ZrB 2 1SiC, 20 by refining the microstructure of the in situ formed ZrO 2 (c) skeleton.…”
Section: Thermochemical and Mechanical Stability Analysis Of The mentioning
confidence: 99%
“…SiO 2 ðlÞ þ COðgÞ (2) respectively. Intense research is ongoing to characterize and enhance this scale as a barrier against oxygen [11][12][13][14][15][16][17][18][19][20][21][22][23] (the scale microstructure can be seen in, for example, Fig. 4 of Opila et al 15 ), which apparently is superior to that of either monolithic diboride or SiC at the intended high temperatures (see Fig.…”
mentioning
confidence: 99%
“…Hot Pressing Hot pressing is the conventional method for fabricating UHTCs and has been used extensively, [8][9][10]12,16,17,20,22,27,33,35,39,47,48,[50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65] with typical temperatures of~2173 K (1900°C) and applied pressures between 30 and 50 MPa. It allows full densification without the use of sintering aids, although most research employs modest amounts of sintering aids such as silicides, borides, metals (e.g., Ni), or C to reduce processing times and temperatures, thus reducing the costs associated with the production technique.…”
Section: Densification Methodsmentioning
confidence: 99%
“…Ultrafine SiC also allows material to be produced by hot pressing at 2173 K (1900°C) without the presence of a sintering aid [24] and improves the oxidation resistance of the material. [24][25][26][27] The flexural strength of ZrB 2 -SiC composites produced with ultrafine SiC can increase after oxidation, whereas the flexural strength of composites produced with larger SiC powder (average particle size %6.4 lm) decreases after oxidation. [26] As the temperature is increased, a passive to active transition of SiC oxidation occurs between 1873 K and 1973 K (1600°C and 1700°C) in air under atmospheric pressure, [25,28] so that above these temperatures, any protection afforded by a glassy oxide layer is largely lost.…”
Section: A Oxidationmentioning
confidence: 99%
“…According to the data of the absorption spectra, the optical bandgap (Eg) of NiO can be estimated by using the following Tauc equation [46]:…”
Section: Uv-visible Spectroscopymentioning
confidence: 99%