We propose a model elucidating the readout mechanism of the super resolution near-field structure (super-RENS) with an elliptic-bubble structure. The temperature dependence of the complex refractive index of Ge 2 Sb 2 Te 5 is determined by in situ ellipsometry. The complex refractive index of Ge 2 Sb 2 Te 5 shows quite an abrupt change at approximately 608 C. The temperature profile is calculated using a proposed first-order differential equation. Above the threshold readout power, Ge 2 Sb 2 Te 5 is locally heated over the critical temperature when thickest region of Ge 2 Sb 2 Te 5 is in commensurate with the center position of the Gaussian laser power distribution, which results in the abrupt amplification of signal-to-noise ratio (SNR) of the calculated reflectance. Thus, a model revealing the essential aspect of the elliptic-bubble super-RENS is proposed to elucidate its readout mechanism.
The optical properties of PtO
x
thin films used for the optical recording layer of super resolution near-field structures (super-RENS) are studied at high temperatures. A series of PtO
x
thin films for various molar oxygen fraction x were prepared using the reactive magnetron sputtering technique. From the ellipsometric studies, it is found that the complex refractive index of PtO
x
changes monotonically from that of metallic Pt to that of dielectric PtO2 as the molar oxygen fraction increases. When temperature increases from 30 to 700°C, all PtO
x
is completely decomposed at 549°C and, for the samples with x larger than 1.3, the condensation of porous Pt films is completed at 700°C. The surface roughness of PtO
x
thin films with x larger than 1.3 increases markedly after temperature ramping and PtO
x
thin films evolve into Pt metal by passing through three steps of oxidization, decomposition and condensation.
An ellipsometer with nanosecond time resolution has been proposed for the investigation of the phase change behavior of Ge 2 Sb 2 Te 5 heated by electrical pulses of 20 -100 ns in real time. This passive single-wavelength ellipsometer has a division-of-amplitude photopolarimeter (DOAP) configuration for polarization state detection to collect ellipsometric data in nanoseconds and consists of a microfocusing lens system to achieve a spot size of $15 mm.
The optical properties of AgO
x
thin films used as mask layers for a super-resolution near-field structure (super-RENS) were determined by in situ and ex situ ellipsometries and UV/VIS spectrometry. Irreversible changes of optical properties of AgO
x
thin films with temperature were also investigated.
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