In the present study, 0.10Pb(Sb1/2Sn1/2)O3-0.25PbTiO3-0.65PbZrO3 ceramics modified with La2O3 (1 mol%) and MnO2 (0∼0.30 mol%) were fabricated, and the structural and pyroelectric properties with different amounts of MnO2 were studied. The crystal structure of specimens was rhombohedral, and average grain sizes decreased with increasing amounts of MnO2. The (Pb0.99La0.01)[(Sb1/2Sn1/2)0.10Ti0.25Zr0.65]O3 specimen modified with 0.24 mol% MnO2 showed a large pyroelectric coefficient, p, (=6.73×10-8 C/cm2 K) and voltage responsivity, R
v, (=125 V/W). Also, in the same specimens, noise equivalent power, NEP, and detectivity, D
*, were 2.376×10-7 W/Hz1/2 and 6.793×106 cm Hz1/2 W, respectively. In the (Pb0.99La0.01)[(Sb1/2Sn1/2)0.10Ti0.25Zr0.65]O3 specimens modified with 0.24 mol% MnO2 voltage responsivity decreased with increasing chopper frequency, and was independent of the thickness of the specimens.
PZT(70/30) powder was prepared by a sol-gel method and PZT thick films were
fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure
was repeated 4 times. And then the PZT(30/70) precusor solution was spin-coated on the PZT thick
films. A concentration of a coating solution was 0.5 mol/L and the number of coating was varied from
0 to 6.
The porosity decreased and the grain size increased with increasing the number of coatings. The
thickness of the PZT-6(6: number of coatings) films was about 60~65μm. All PZT thick films showed
the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric
constant of the PZT-6 thick film was 540. The remanent polarization and coercive field of the PZT-6
film were 23.6 μC /cm2, 12.0 kV/cm, respectively.
The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method
exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric
properties, and TCR properties were strongly dependent upon the annealing temperature. The
dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of
2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about
-3.7%/K.
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