Glass-ceramics of PbS-doped 80GeS 2 Á20Ga 2 S 3 were fabricated by heat treatments of base glasses at T g +30°C for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X-ray diffraction and Raman results indicated that Ga 2 S 3 and GeS 2 crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS 2 Á20Ga 2 S 3 glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system.

Series of glassy and glass‐ceramic samples in the GeSe2–Ga2Se3–NaI system is prepared by melt‐quenching technique and the glass‐forming region is well‐defined by XRD investigations. Na‐ion conduction behavior is systemically studied by impedance measurements. For the glasses in the series (100−2x)GeSe2–xGa2Se3–xNaI, ionic conductivities increased with increasing x, whereas the attributed activation energy of ion conduction decreases. The enhanced mechanism is discussed by employing Raman spectra. In addition, the effect of the crystal phases NaI and Ga2Se3 on the ionic conduction behavior in the (70−x)GeSe2–xGa2Se3–30NaI samples is discussed. Although it shows that the poorly conducting crystallites of NaI and Ga2Se3 have a negative effect on the ionic conductivities in this series, the highest ionic conductivity of 1.65 × 10−6 S/cm is obtained in the 45GeSe2–25Ga2Se3–30NaI glass. Finally, this study also demonstrates a possible way to search appropriate Na‐ion solid electrolytes for all‐solid‐state batteries.

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Relationship among the composition, properties, and structure of glasses are one of the long standing topics in glass science. In this paper, (100-x) GeS2-xIn2S3 (x=10, 15, 20, 25 or 30 mol%) glasses and glass-ceramics are prepared by melt-quenching and subsequent heat treatments. Their composition dependence of optical bandgap, glass transition temperature, and crystallization behavior is measured by various techniques, and the effect of Ga or In element and the related structural units on their properties is discussed with the help of the previous researches on the GeS2-Ga2S3 glass system. Results show that In has a much bigger influence than Ga on the optical bandgap and glass transition temperature of chalcogenide glasses, while the crystallization behavior of the two kinds of glasses containing Ga and In is totally different, but has a close connection with the respective phase diagram. Their structural motifs can be realized by employing polarized Raman spectra. Consequently, combined with the recognition of their phase diagrams, the composition dependence of physiochemical properties and crystallization behavior, as well as the structural motifs, the correlation between chemical and structural topology is briefly discussed, which may provide a new insight into the glass topological structure.