, et al.. Formation and properties of chalcogenide glasses based on GeS2-Sb2S3-AgI system. Materials Letters, Elsevier, 2014, 132, pp.203-205. 10 AbstractNovel glasses in GeS 2 -Sb 2 S 3 -AgI system have been prepared by melt-quenching method. A large glass-forming region was found in the novel system, in which almost 60mol% AgI has been incorporated.The basic physiochemical properties of glass samples were investigated. With the addition of AgI, red shift of short-wavelength absorption edge indicates and distinct drop of the glass transition temperature (T g ) were observed. In addition, a high Ag + ion conductivity of 6.37 10 -4 S/cm at room temperature can be obtained in 55(0.6GeS 2 -0.4Sb 2 S 3 )-45AgI sample, indicating that these glasses have potential application as amorphous solid electrolytes.

Glass-ceramics of PbS-doped 80GeS 2 Á20Ga 2 S 3 were fabricated by heat treatments of base glasses at T g +30°C for different durations. They exhibited improved mechanical properties such as hardness and resistance to crack propagation, and meanwhile retained their excellent infrared transmission. X-ray diffraction and Raman results indicated that Ga 2 S 3 and GeS 2 crystals were precipitated inside glassy matrix. The crystallization kinetics of base glass was investigated using differential scanning calorimetry under nonisothermal conditions. Compared with the previous work concerning on 80GeS 2 Á20Ga 2 S 3 glass, there exists some different features of crystallization behavior. Such variation is discussed and correlated with the network structure and crystallization kinetics in this glass system.

A series of (1x)GeS 2.5 -xSb chalcogenide glasses were prepared using the conventional melt-quenching method. Their microstructure and thermal response were systematically studied. We observe a compositional threshold of x = 0.25 which corresponds to chemical stoichiometric composition in the calorimetric experiments. It is in good accordance with the Raman scattering results and laser-induced phase transformation behavior. They also indicate that phase separation of Sb-rich phase exists in the S-poor samples. Moreover, we got a structural modeling of this phase separation: (1) at x = 0.25, which is chemical stoichiometric composition, the structural motifs are only SbS 3 pyramid and GeS 4 tetrahedra, and the threecoordinated SbS 3 pyramid is isolated by GeS 4 tetrahedra; (2) at x < 0.25, the S-S bonds exist in the glass network due to the excess of S; and (3) at x > 0.25, the excess of Sb break the Ge-S and Sb-S bonds to form Sb(Ge)-Sb Bonds, and the Sb atoms segregate from the backbone to nucleate a separate Sb-rich phase. This work provides a new way to investigate the phase separation of glass networks and helps us to better understand their related physical properties.Glasses with compositions of (1 À x)GeS 2.5 -xSb (x = 0, 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.40, 0.45, 0.50, and 0.55) were prepared by the melt-quenching technique. Highly J. Heo-contributing editor Manuscript No. 33629.

Diagram of the phase transformation behavior of GeS 2 -Ga 2 S 3 -CsI glasses is realized in this article and the structureproperty dependence of the chalcogenide glasses is elucidated using differential scanning calorimetry and Raman spectroscopy. We observe the compositional threshold of crystallization behavior locates at x = 6-7 mol% in (100Àx)(0.8GeS 2 -0.2Ga 2 S 3 )-xCsI glasses, which is confirmed by the thermodynamic studies. Structural motifs are derived from the Raman result that [Ge(Ga)S 4 ], [S 2 GeI 2 ], [S 3 GaI], and [S 3 Ga-GaS 3 ] were identified to exist in this glass network. Combined with the information of structural threshold, local arrangement of these structural motifs is proposed to explain all the experimental observations, which provides a new way to understand the correlation between crystallization behavior and network structure in chalcogenide glasses.

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