Metal-halide perovskites have emerged as exceptional semiconductors for optoelectronic applications. Substitution of the monovalent cations has advanced luminescence yields and device efficiencies. Here, we control the cation alloying to enhance optoelectronic performance through alteration of the charge carrier dynamics in mixed-halide perovskites. In contrast to singlehalide perovskites, we find high luminescence yields for photo-excited carrier densities far below solar illumination conditions. Using time-resolved spectroscopy we show that the charge-carrier recombination regime changes from second to first order within the first tens of nanoseconds after excitation. Supported by microscale-mapping of the optical bandgap, electrically-gated transport measurements and first-principles calculations, we demonstrate that spatially-varying energetic disorder in the electronic states causes local charge accumulation, creating p-and n-type photodoped regions, which unearths a strategy for efficient light emission at low charge-injection in solar cells and LEDs. Metal-halide perovskites exhibit outstanding optoelectronic properties, such as low Urbach energies, high carrier mobilities and diffusion lengths, as well as very high photoluminescence quantum efficiencies (PLQEs), 1 which are essential to achieve performance limits in solar cells and light-emitting diodes (LEDs). 2-5 This culminated in reported photovoltaic performances 6,7 exceeding 25 % upon incorporation of a series of monovalent cation mixtures (formamidinium, Cs) and passivating additives (Rb, K) to the methylammonium mixed-halide perovskite prototype MAPb(Br0.17I0.83)3 8,9 , as well as bright LEDs 10-15. Here, we show that local bandgap variations in mixed-halide thin films yield photo-doped regions for efficient photoluminescence, favourable for optoelectronic applications.
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Stable but not quite cubic
The black, photoactive phase of formamidinium (FA) perovskites, which is usually stabilized by cation alloying to avoid the formation of inactive hexagonal phases, is assumed to be cubic. High-resolution microscopy studies by Doherty
et al
. using nanoscale probes revealed that these FA-rich phases are not cubic but rather undergo slight tilting (by two degrees) of the octahedra. Black phases can have localized regions of hexagonal phases that nucleate degradation. Surface-bound ethylenediaminetetraacetic acid stabilized the tilted phase of pure FA lead triiodide against environmental degradation. —PDS
Understanding the nanoscopic chemical and structural changes that drive instabilities in emerging energy materials is essential for mitigating device degradation. The power conversion efficiency of halide perovskite photovoltaic devices has reached 25.7% in single junction and 29.8% in tandem perovskite/silicon cells 1,2 , yet retaining such performance under continuous operation has remained elusive 3 . Here, we develop a multimodal microscopy toolkit to reveal that in leading formamidinium-rich perovskite absorbers, nanoscale phase impurities including hexagonal polytype and lead iodide inclusions are not only traps for photo-excited carriers which themselves reduce performance 4,5 , but via the same trapping process are sites at which photochemical
Mixed‐halide lead perovskites have attracted significant attention in the field of photovoltaics and other optoelectronic applications due to their promising bandgap tunability and device performance. Here, the changes in photoluminescence and photoconductance of solution‐processed triple‐cation mixed‐halide (Cs0.06MA0.15FA0.79)Pb(Br0.4I0.6)3 perovskite films (MA: methylammonium, FA: formamidinium) are studied under solar‐equivalent illumination. It is found that the illumination leads to localized surface sites of iodide‐rich perovskite intermixed with passivating PbI2 material. Time‐ and spectrally resolved photoluminescence measurements reveal that photoexcited charges efficiently transfer to the passivated iodide‐rich perovskite surface layer, leading to high local carrier densities on these sites. The carriers on this surface layer therefore recombine with a high radiative efficiency, with the photoluminescence quantum efficiency of the film under solar excitation densities increasing from 3% to over 45%. At higher excitation densities, nonradiative Auger recombination starts to dominate due to the extremely high concentration of charges on the surface layer. This work reveals new insight into phase segregation of mixed‐halide mixed‐cation perovskites, as well as routes to highly luminescent films by controlling charge density and transfer in novel device structures.
Mixed
lead–tin halide perovskites have sufficiently low
bandgaps (∼1.2 eV) to be promising absorbers for perovskite–perovskite
tandem solar cells. Previous reports on lead–tin perovskites
have typically shown poor optoelectronic properties compared to neat
lead counterparts: short photoluminescence lifetimes (<100 ns)
and low photoluminescence quantum efficiencies (<1%). Here, we
obtain films with carrier lifetimes exceeding 1 μs and, through
addition of small quantities of zinc iodide to the precursor solutions,
photoluminescence quantum efficiencies under solar illumination intensities
of 2.5%. The zinc additives also substantially enhance the film stability
in air, and we use cross-sectional chemical mapping to show that this
enhanced stability is because of a reduction in tin-rich clusters.
By fabricating field-effect transistors, we observe that the introduction
of zinc results in controlled p-doping. Finally, we show that zinc
additives also enhance power conversion efficiencies and the stability
of solar cells. Our results demonstrate substantially improved low-bandgap
perovskites for solar cells and versatile electronic applications.
Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining quantitative optical spectroscopic techniques and synchrotron nanoprobe measurements. We show that compositional disorder dominates the optoelectronic response, while nanoscale strain variations even of large magnitude (~1 %) have only a weak influence. Nanoscale compositional gradients drive carrier funneling onto local regions associated with low electronic disorder, drawing carrier recombination away from trap clusters associated with electronic disorder and leading to high local photoluminescence quantum efficiency. These measurements reveal a global picture of the competitive nanoscale landscape, which endows enhanced defect tolerance in devices through spatial chemical disorder that outcompetes both electronic and structural disorder.
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