Articles you may be interested inSurface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy Appl. Phys. Lett. 88, 192506 (2006); 10.1063/1.2202388Spin-polarized scanning tunneling microscopy and spectroscopy study of c ( 2 × 2 ) reconstructed Cr(001) thin film surfaces Evidence of a topological antiferromagnetic order on ultrathin Cr(001) film surface studied by spin-polarized scanning tunneling spectroscopy A previous study demonstrates that the addition of organic compounds containing a -CHO or -COOH group to a Cr plating bath results in a chromium deposit which has greatly improved properties. Such deposits have fewer defects than chromium layers produced by conventional methods, the hardness of these deposits increases with increasing annealing temperature in the range of 100 to 6OO·C and they are more resistive to corrosion by hydrochloric acid than conventional deposits. In this study the composition and chemical interactions of a chromium layer prepared using this new method were examined with Auger electron spectroscopy (AES) and electron spectroscopy for chemical analysis (ESCA) before and after vacuum annealing at 700·C and after argon-ion bombardment. S, C, 0, CI, N, and Ca are incorporated into the deposits from the electrolytic bath. Cr is present as oxides, sulfide, and metal. Annealing causes segregation of S to the surface and diffusion of oxygen into the bulk. This results in conversion of the surface chromium oxides into Cr 2 S 3 and metallic Cr. C also segregates to the surface during annealing forming chromium carbide.
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