Articles you may be interested inSurface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy Appl. Phys. Lett. 88, 192506 (2006); 10.1063/1.2202388Spin-polarized scanning tunneling microscopy and spectroscopy study of c ( 2 × 2 ) reconstructed Cr(001) thin film surfaces Evidence of a topological antiferromagnetic order on ultrathin Cr(001) film surface studied by spin-polarized scanning tunneling spectroscopy A previous study demonstrates that the addition of organic compounds containing a -CHO or -COOH group to a Cr plating bath results in a chromium deposit which has greatly improved properties. Such deposits have fewer defects than chromium layers produced by conventional methods, the hardness of these deposits increases with increasing annealing temperature in the range of 100 to 6OO·C and they are more resistive to corrosion by hydrochloric acid than conventional deposits. In this study the composition and chemical interactions of a chromium layer prepared using this new method were examined with Auger electron spectroscopy (AES) and electron spectroscopy for chemical analysis (ESCA) before and after vacuum annealing at 700·C and after argon-ion bombardment. S, C, 0, CI, N, and Ca are incorporated into the deposits from the electrolytic bath. Cr is present as oxides, sulfide, and metal. Annealing causes segregation of S to the surface and diffusion of oxygen into the bulk. This results in conversion of the surface chromium oxides into Cr 2 S 3 and metallic Cr. C also segregates to the surface during annealing forming chromium carbide.
The oxidation of a polycrystalline tin foil was examined using Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), scanning Auger microscopy (SAM), ion scattering spectroscopy (ISS), and electron-stimulated desorption (ESD). An oxidation state which does not correspond to SnO or SnO2 has been identified using XPS and retarding mode AES at low oxygen exposures (≤3000 L). It has been suggested in previous studies that oxygen penetrates beneath the outermost layers during the early stages of oxidation of certain metals such as tin. This suggestion has been verified in this study using ISS and ESD. Very small amounts of oxygen are detected with ISS on a sputter-cleaned Sn surface, and this O signal does not increase with oxygen exposure even though XPS and AES show a significant oxygen uptake. Additionally, no O+signal is detected with ESD whereas large ESD O+ signals are obtained from surfaces of bulk tin oxides. The oxygen concentration is uniform across the sample surface at these exposures as determined by SAM implying that grain boundaries do not provide preferential adsorption sites.
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