We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.
In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.
The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155-300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.
The functional requirements and design drivers for an Optical Communications subsystem are assessed based on the system requirements imposed by a proposed Europa Orbiter mission. Unlike near-Earth optical communications systems, deep space missions impose a unique set of requirements that drives the subsystem design. Significant challenges on laser efficiency, thermal control, pointing and tracking, stray/scatter light control, and subsystem mass/power need to be addressed for a successful subsystem implementation. The baseline design concept for a lasercom subsystem for the Europa orbiter mission employs a 30-cm diameter, diffraction-limited telescope, and a diode pumped solid state laser operating at 1 .06 pin to support downlink communications. The baseline pointing and tracking approach is to perform Earth Image tracking with occasional calibration using the Earth-moon or Earth-star images. At high phase angles when the Earth image does not provide sufficient brightness for high rate tracking, inertial sensors (accelerometers) measurements are used to propagate the knowledge of the optical boresight at a higher rate in between celestial reference updates. Additionally, uplink beacon tracking will be used to support pointing at short range and near solar opposition when Earth image along does not provide sufficient signal power for tracking.
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