Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Greer, Frank; Hamden, Erika; Jacquot, Blake C.; Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Monacos, Steve; Nikzad, Shouleh

doi:10.1116/1.4750372

Cited by 15 publications

(12 citation statements)

References 24 publications

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“…The first time JPL passivated a CCD using MBE, the passivation layer comprised 5 nm of silicon doped at 3 × 10 20 B/cm −3 , i.e ., 3-D doping, plus a sacrificial 1-nm un-doped silicon cap layer to form the surface oxide [ 29 ]. In all subsequent devices, JPL has used 2D doping for surface passivation [ 17 , 18 , 28 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 ]. During MBE growth, a thin layer of un-doped silicon is grown on the substrate to form an atomically clean, uniform silicon surface.…”

Section: Materials and Methods: Silicon And Gallium Nitride/galliumentioning

confidence: 99%

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Nikzad

Hoenk

Jewell

et al. 2016

Sensors

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Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

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Section: Materials and Methods: Silicon And Gallium Nitride/galliumentioning

confidence: 99%

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Nikzad

Hoenk

Jewell

et al. 2016

Sensors

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“…[1][2][3][4] Using ALD, we have further demonstrated world record QE at deep and far ultraviolet wavelengths. [5][6][7] With the recent acquisition and commissioning of a production-scale silicon MBE system, JPL has greatly expanded its capabilities for producing high-performance delta-doped, back-illuminated imaging arrays with high throughput and high yield ( Figure 1). 4,8 Using this system, we demonstrated superlattice-doped CMOS imaging arrays with unprecedented stability under direct illumination with pulsed deep ultraviolet (DUV) lasers.…”

Section: Challenge and Paradox: Atomic Scale Control Over Surfaces Anmentioning

confidence: 99%

“…31 In all subsequent devices, JPL has used 2D doping for surface passivation. [1][2][3][4][5][6][7][8][9][10][11] The advantages of 2D-doping over 3D-doping are described in detail below.…”

Section: 1mentioning

confidence: 99%

Superlattice-doped silicon detectors: progress and prospects

et al. 2014

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In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 10 14 cm -2 . Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

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“…For future implementations on active Si sensors ALD is an attractive choice due to its demonstrated efficacy at preserving detector QE in the UV, which is strongly dependent on the electrical quality of the illuminated surface [1]. ALD has been shown to be superior to other dielectric deposition techniques such as sputtering at maintaining UV QE [23], and may be effective at preventing additional surface damage during the evaporation or sputtering of subsequent metal layers.…”

Section: Methodsmentioning

confidence: 99%

Metal–dielectric filters for solar–blind silicon ultraviolet detectors

et al. 2015

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We report on the fabrication of metal-dielectric thin film stacks deposited directly onto silicon substrates for use as ultraviolet bandpass filters. Integration of these filters onto silicon improves the admittance matching of the structure when compared to similar designs fabricated on transparent substrates, leading to higher peak transmission or improved out-of-band rejection if used with a Si-based sensor platform. Test structures fabricated with metallic Al and atomic layer deposited Al2O3 were characterized with spectroscopic ellipsometry and agree well with optical models. These models predict transmission as high as 90% the spectral range of 200-300 nm for simple three-layer coatings.

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Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Cited by 15 publications

References 24 publications

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Superlattice-doped silicon detectors: progress and prospects

Metal–dielectric filters for solar–blind silicon ultraviolet detectors

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