A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared

Jacquot, Blake C.; Monacos, Steve; Hoenk, Michael E.; Greer, Frank; Jones, Todd J.; Nikzad, Shouleh

doi:10.1063/1.3574220

Cited by 13 publications

(14 citation statements)

References 19 publications

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“…Devices were characterized in a fully calibrated vacuum UV system equipped with a vacuum monochrometer, two sources of deuterium and tungsten allowing characterization from 120-700 nm, a differentially pumped device chamber, and National Institute of Standards and Technology (NIST)-calibrated photodiodes for flux measurements. Details of this characterization system are described elsewhere [15,16].…”

Section: Methodsmentioning

confidence: 99%

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

et al. 2012

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We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

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Section: Methodsmentioning

confidence: 99%

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

et al. 2012

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“…Devices were then wire bonded and packaged for testing. A measurement setup for finding absolute QEs was developed using JPL's vacuum UV characterization setup (a detailed description of characterization system and methods of measurements are described in a separate paper (Jacquot et al [16]) and used for measuring the effectiveness of each film type. The testing chamber steps through wavelengths from Lyman-α into the infrared, illuminating the CCD.…”

Section: Testing On Functional Devicesmentioning

confidence: 99%

“…With functional devices, we are able to directly measure the effect the AR coating has on transmission into the Si. Papers are in preparation on the stability and testing of these devices, as well as on detailed functional results and future FUV detector technology [15,16].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet antireflection coatings for use in silicon detector design

et al. 2011

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We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a coated CCD detector with theoretical quantum efficiencies (QEs) of greater than 60% at wavelengths from 120 to 300 nm. This high efficiency may be reached by coating a backside-illuminated, thinned, delta-doped CCD with a series of thin film AR coatings. The materials tested include MgF 2 (optimized for highest performance from 120-150 nm), SiO 2 (150-180 nm), Al 2 O 3 (180-240 nm), , and HfO 2 (240-300 nm). A variety of deposition techniques were tested and a selection of coatings that minimized reflectance on a Si test wafer were applied to functional devices. We also discuss future uses and improvements, including graded and multilayer coatings.

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“…18 Briefly, imaging performance of the CCD was characterized from 121.6 to 650 nm starting from the longer wavelength end of the spectrum by taking flat field images over controlled exposure times. Two separate light sources were used for illumination (deuterium lamp for UV and tungsten-halogen for UV-visible).…”

Section: A103-3 Greer Et Almentioning

confidence: 99%

“…Note that single photons at very short wavelengths can produce more than one electron when they are absorbed by a silicon detector. 18 Therefore, we correct our calculations of absolute quantum efficiency for this gain factor, taking into account that the quantum yield for those photons is greater than unity.…”

Section: Introductionmentioning

confidence: 99%

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

Greer

Hamden

Jacquot

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report here on a new technique, combining the atomic precision of molecular beam epitaxy and atomic layer deposition, to fabricate back illuminated silicon CCD detectors that demonstrate world record detector quantum efficiency (>50%) in the near and far ultraviolet (155-300 nm). This report describes in detail the unique surface engineering approaches used and demonstrates the robustness of detector performance that is obtained by achieving atomic level precision at key steps in the fabrication process. The characterization, materials, and devices produced in this effort will be presented along with comparison to other approaches.

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A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared

Cited by 13 publications

References 19 publications

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Ultraviolet antireflection coatings for use in silicon detector design

Atomically precise surface engineering of silicon CCDs for enhanced UV quantum efficiency

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