A simple solution-based approach for the deposition of Cu 2 ZnSn(S,Se) 4 using an amine−thiol mixture is presented. The versatility of this solvent mixture in dissolving different cation sources and chalcogens opens the door for a variety of metal chalcogenide molecular precursor designs. The process involves incorporating the metal sources and chalcogens into an amine−thiol solvent mixture at room temperature, spin coating a precursor film, and heat-treating precursor films in both an inert gas and selenium atmosphere. With this solution approach, high-quality kesterite CZTS and CZTSSe thin films were formed after low-temperature annealing and selenization. Solar cells were fabricated based on these CZTSSe thin films, resulting in a total area power conversion efficiency of 7.86% for a cell area of 0.47 cm 2 under standard AM 1.5 illumination.

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