CZTSe devices fabricated from CZTSSe nanoparticles

Walker, Bryce C.; Negash, Bethlehem G.; Szczepaniak, Stephen M.; Brew, Kevin

doi:10.1109/pvsc.2013.6744994

Cited by 4 publications

(4 citation statements)

References 14 publications

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“…The concentrations of Cu, Zn, Sn, S, and Se are uniform in the large-grained layer, while the concentrations of Cu and Zn have some fluctuations in the fine-grained layer. The S : Se ratio is believed to have played an important role in changing the grain growth behavior during selenization as reported by colloidal routes studies, 5,36 leading to the formation of a fine-grained layer in this case.…”

supporting

confidence: 54%

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

et al. 2016

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Bulk metals and metal chalcogenides are found to dissolve in primary amine-dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(S(x),Se(1-x))3, and Cu2ZnSn(S(x)Se(1-x))4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(S(x)Se(1-x))4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

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supporting

confidence: 54%

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

et al. 2016

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“…group 16) of the periodic table of elements. Selenium, which has been used to completely replace S to form kesterite material composed of copper zinc tin selenide (CZTSe), has recorded a PCE value of 11.8% [ 11 , 12 , 13 ]. Partial substitution of S in kesterite material by Se, giving a solid solution of copper zinc tin sulfide selenide (CZTSSe), has so far recorded the highest efficiency obtained for kesterite materials, with a PCE value of 12.6% [ 14 ].…”

Section: Introductionmentioning

confidence: 99%

Electronics of Anion Hot Injection-Synthesized Te-Functionalized Kesterite Nanomaterial

et al. 2021

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Metal chalcogenides such as copper zinc tin sulfide (CZTS) have been intensively studied as potential photovoltaic cell materials, but their viability have been marred by crystal defects and low open circuit potential (Voc) deficit, which affected their energy conversion efficiency. Strategies to improve on the properties of this material such as alloying with other elements have been explored and have yielded promising results. Here, we report the synthesis of CZTS and the partial substitution of S with Te via anion hot injection synthesis method to form a solid solution of a novel kesterite nanomaterial, namely, copper zinc tin sulfide telluride (CZTSTe). Particle-size analyzed via small angle X-ray scattering spectroscopy (SAXS) confirmed that CZTS and CZTSTe materials are nanostructured. Crystal planes values of 112, 200, 220 and 312 corresponding to the kesterite phase with tetragonal modification were revealed by the X-ray diffraction (XRD) spectroscopic analysis of CZTS and CZTSTe. The Raman spectroscopy confirmed the shifts at 281 cm−1 and 347 cm−1 for CZTS, and 124 cm−1, 149 cm−1 and 318 cm−1 for CZTSTe. High degradation rate and the production of hot electrons are very detrimental to the lifespan of photovoltaic cell (PVC) devices, and thus it is important to have PVC absorber layer materials that are thermally stable. Thermogravimetric analysis (TGA) analysis indicated a 10% improvement in the thermal stability of CZTSTe compared to CZTS at 650 °C. With improved electrical conductivity, low charge transfer resistance (Rct) and absorption in the visible region with a low bandgap energy (Eg) of 1.54 eV, the novel CZTSTe nanomaterials displayed favorable properties for photovoltaics application.

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“…Several strategies to promote grain growth and to reduce the process temperature have been attempted. These strategies include the incorporation of sodium , copper selenide nanocrystals , or antimony in the absorber layer and the use of a multi‐step selenization process .…”

Section: Introductionmentioning

confidence: 99%

Spray-deposited CuIn_1−x Ga_x Se₂ solar cell absorbers: Influence of spray deposition parameters and crystallization promoters

Carrete

Placidi

Shavel

et al. 2014

Phys. Status Solidi A

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To produce smooth, crack-free, and highly crystalline absorber layers are the main challenges in the fabrication of thin film solar cells using nanoparticle-based solution-processing technologies. In this work, we report on the optimization of the spray deposition parameters to produce highly homogeneous CuIn 1Àx Ga x S 2 thin films with controlled thickness using nanoparticle-based inks. We further explore the use of inorganic ligand exchange strategies to introduce metal ions able to promote crystallization during the selenization of the layers, removing structural defects and grain boundaries that potentially act as recombination centers.

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CZTSe devices fabricated from CZTSSe nanoparticles

Cited by 4 publications

References 14 publications

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

Electronics of Anion Hot Injection-Synthesized Te-Functionalized Kesterite Nanomaterial

Spray-deposited CuIn_1−x Ga_x Se₂ solar cell absorbers: Influence of spray deposition parameters and crystallization promoters

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CZTSe devices fabricated from CZTSSe nanoparticles

Cited by 4 publications

References 14 publications

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

Electronics of Anion Hot Injection-Synthesized Te-Functionalized Kesterite Nanomaterial

Spray-deposited CuIn1−x Ga x Se2 solar cell absorbers: Influence of spray deposition parameters and crystallization promoters

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Spray-deposited CuIn_1−x Ga_x Se₂ solar cell absorbers: Influence of spray deposition parameters and crystallization promoters