Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

Abstract

Bulk metals and metal chalcogenides are found to dissolve in primary amine-dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(S(x),Se(1-x))3, and Cu2ZnSn(S(x)Se(1-x))4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(S(x)Se(1-x))4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

Green Atmospheric Aqueous Solution Deposition for High Performance Cu2ZnSn(S,Se)4 Thin Film Solar Cells

“…To further detect the possible impurities of the CZTSSe thin film, Raman spectra with an excitation laser wavelength of 532 nm were collected and shown in Figure b. The measured Raman spectra from the selenized CZTSSe thin films under different deposition atmosphere show a main peak at ≈200 cm −1 and two weak shoulder peaks at ≈177 and ≈239 cm −1 , which can be ascribed to the literature values of CZTSe . The minor peaks at ≈328 cm −1 are consistent with the two‐mode behavior of pure phase CZTSSe .…”

“…The measured Raman spectra from the selenized CZTSSe thin films under different deposition atmosphere show a main peak at ≈200 cm −1 and two weak shoulder peaks at ≈177 and ≈239 cm −1 , which can be ascribed to the literature values of CZTSe . The minor peaks at ≈328 cm −1 are consistent with the two‐mode behavior of pure phase CZTSSe . Possible impurity phases (ZnSe, SnSe 2 , SnSe, and Cu 2 SnSe 3 ) have not been detected in the Raman spectra.…”

“…However, after the selenization process, the metastable wurtzite phase of the as‐prepared CZTS thin film was converted into the thermodynamically stable kesterite structure. The distinct peaks with high intensity at 22.36°, 27.55°, 28.73° 45.69°, 54.21°, and 66.65° were observed and can be indexed to the (110), (112), (103), (204)/(220), (312)/(116), and (400)/(008) planes of kesterite, indicating that the packed grains in the CZTSSe thin films with good crystallinity have been formed (Figure a green and blue lines), which correspond well with those of previously reported results . To further detect the possible impurities of the CZTSSe thin film, Raman spectra with an excitation laser wavelength of 532 nm were collected and shown in Figure b.…”

Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances

“…To identify the formation of the secondary phases and impacts of various growth temperatures on CZTSe film, Raman scattering measurement was performed at room temperature with a 532 nm laser excitation. In literature, the A1 mode Raman peak of CZTSe and CZTS is located at 194-197 cm −1 and 322-327 cm −1 , respectively [27][28][29][30][31][32]. Thus, as seen in Figure 4, the primary main peak of the films is assigned to the Al peak for CZTSe and the second main peak seems to be assigned to the A1 peak for CZTS.…”

A thiol-amine mixture for metal oxide towards device quality metal chalcogenides

“…A thiol-amine mixture for metal oxide towards device quality metal chalcogenides Tong Zhang, Lijian Zhang, Yiwei Yin, Chenhui Jiang, Shi'ang Li, Changfei Zhu * and Tao Chen * Metal chalcogenides (MCs) are significant semiconducting materials possessing a variety of applications in catalysts [1,2], thermoelectrics [3,4], rewritable memory [5,6], thin film transistors (TFTs) [7,8], and solar cells [9][10][11][12][13][14][15][16], usually presenting as solid films. Until now, one can deposit the bulk materials on a substrate by either topdown method such as thermal evaporation or bottom-up deposition from molecular precursors.…”