We demonstrate high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor. By unique atomic layer deposition (ALD) technology, a conformal nano layer of TiN was deposited on the silicon nanorod arrays as the active material.The TiN coated silicon nanorods as a supercapacitor electrode lead to a 6 times improvement in capacitance compared to flat TiN film electrode.

No abstract

Potassium hydroxide polishing of nanoscale deep reactive-ion etched ultrahigh aspect ratio gratings J. Vac. Sci. Technol. B 31, 06FF02 (2013); 10.1116/1.4820901Silicon nitride hardmask fabrication using a cyclic CHF 3 -based reactive ion etching process for vertical profile nanostructures J.Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching Initial cluster formation on silicon surfaces in cyclic deep reactive ion etching ͑c-DRIE͒ using c-C 4 F 8 / SF 6 plasma is investigated. These clusters act as a nanomask for the fabrication of nanostructured surfaces such as silicon grass. Different wafer preconditioning regimes and subsequent x-ray photoelectron spectroscopy show that no wafer or process contaminations are the reason for nanomasking in c-DRIE. Furthermore, no Si-containing compounds, such as SiF x O y , SiO x , or SiC, are detected. The clusters consist of residues of the fluorinated carbon layer deposited in c-DRIE. Experimental process analysis using design of experiments shows the dependence of nanomask morphology on passivation time and power. The results indicate that the properties of the nanomask, in particular, density, are determined during passivation.

Im Rahmen des Beitrags wird die Variation des intrinsischen Stressgradienten in reaktiv gesputterten Aluminiumnitridschichten (AlN) vorgestellt. Erstmals werden Prozessparameter identifiziert, deren gezielte Veränderung während des Sputterprozesses dazu dient, den Stressgradienten dünner AlN-Schichten direkt im Prozess einzustellen. Als wesentliche Parameter werden das Gasflussverhältnis der beiden Sputtergase Argon (Ar) und Stickstoff (N2) sowie die Sputterleistung präsentiert. Sowohl die Erzeugung großer positiver bzw. negativer als auch die Kompensation des intrinsischen Stressgradienten werden mittels freigestellter einseitig eingespannter Mikrobalken gezeigt. Darüber hinaus wird der Einfluss eines nachfolgenden Temperschritts auf den Stressgradienten in einer AlN-Schicht untersucht.

In this work, AlN and nanocrystalline diamond thin films as well as multi-layer structures on their basis are characterized towards their mechanical properties. In particular, the Young's modulus E and the residual stress s are obtained by wafer bow measurements of thin films as well as by bulge experiments and vibration measurements of freestanding membranes. Depending on the growth conditions, the AlN thin films, deposited by reactive magnetron sputtering, revealed values of s $ þ300 up to þ400 MPa and E $ 370 GPa, while the diamond films, grown by microwave plasma CVD, showed values of s $ À60 to þ60 MPa and E $ 870 up to 1000 GPa. The values and the accuracy of the characterization techniques used are discussed and their limits are demonstrated.