2016
DOI: 10.1016/j.elecom.2016.07.002
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Nano fabricated silicon nanorod array with titanium nitride coating for on-chip supercapacitors

Abstract: We demonstrate high aspect ratio silicon nanorod arrays by cyclic deep reactive ion etching (DRIE) process as a scaffold to enhance the energy density of a Si-based supercapacitor. By unique atomic layer deposition (ALD) technology, a conformal nano layer of TiN was deposited on the silicon nanorod arrays as the active material.The TiN coated silicon nanorods as a supercapacitor electrode lead to a 6 times improvement in capacitance compared to flat TiN film electrode.

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Cited by 47 publications
(33 citation statements)
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References 44 publications
(42 reference statements)
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“…The electrode retained ∼48 % of its capacitance when extending the CV scan rate from 0.1 V s −1 to 10 V s −1 regardless of the electrolyte (Figure b), indicating an excellent rate capability of the sputtered TiN electrode. These CV sweeping rates are significantly higher than the previously reported TiN‐based electrodes,,,, and TiN thin film as electrode sputtered on other substrates,,. The high‐rate performance was also observed in GCD test (Fig.…”
Section: Resultsmentioning
confidence: 60%
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“…The electrode retained ∼48 % of its capacitance when extending the CV scan rate from 0.1 V s −1 to 10 V s −1 regardless of the electrolyte (Figure b), indicating an excellent rate capability of the sputtered TiN electrode. These CV sweeping rates are significantly higher than the previously reported TiN‐based electrodes,,,, and TiN thin film as electrode sputtered on other substrates,,. The high‐rate performance was also observed in GCD test (Fig.…”
Section: Resultsmentioning
confidence: 60%
“…Interestingly, this finding is contradictory to those who reported a 28 % capacitance retention after 400 cycles and an 88 % retention after 500 cycles in alkaline, specifically KOH electrolytes. The outstanding stability in this study may be due to several factors, including good adhesion of the Cr/CrN interlayer to the sputtered TiN film as well as a reduction in the number of structural failures caused by irreversible oxidation and imperfect crystallinity of TiN ,. Moreover, line‐of‐sight techniques like reactive sputtering can produce homogenous TiN layers at controlled rates, while the vacuum and plasma environment can eliminate the influences of contamination and further provide passivation via plasma‐enhanced CVD on the interior surfaces of the Ti foam.…”
Section: Resultsmentioning
confidence: 98%
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“…Then the microfabrication techniques are utilized for construction. For instance, bulk silicon was chemically etched by reactive ion etching (RIE), inductive couple plasma etching (ICP) to form microrods and nanowires arrays . Moreover, SiNWs can be produced via hot wire chemical vapor processing at low temperatures, which opens up the possibility of fabrication of MSCs directly on flexible substrates .…”
Section: Fabrication Methodsmentioning
confidence: 99%
“…The main purpose of applying SiC coating technology as protective layer to the surface coated is to increase the lifetime or the performance when it is visible to aggressive environments. The very strong covalent bond between silicon and carbon and its tetrahedral synchronization is the satisfactory explanation to achieve the main purpose [18][19][20]. However, solid adhesion to the substrate and low density of holes and cracks must be obeyed to achieve excellent protective layer.…”
Section: Introductionmentioning
confidence: 99%