Thin films of silicon oxynitrocarbide
(SiONC)
have been deposited on silicon by polymer-source chemical vapor deposition (PSCVD) using poly(dimethylsilane). The chemical and structural composition of these films have been investigated using Fourier transform infrared spectroscopy, elastic recoil detection spectroscopy (ERD), and X-ray photoelectron spectroscopy (XPS). ERD depth-profile analysis revealed a homogeneous film with uniform bulk concentrations for silicon, carbon, nitrogen, and oxygen. XPS analysis showed that nitrogen, oxygen, and carbon were all uniquely bonded to silicon. The oxygen nitrogen bonds were not observed in these films. XPS analysis also revealed the presence of carbon-carbon bonds associated with graphite. It was shown that the graphitic phase is limited to the surface layer of these films, and is due to unintentional carbonization at the end of the deposition process. The relatively low bulk atomic concentration of carbon in the
SiONC
thin films
(∼1%)
render these films a possible alternative to
SiON
, and could become very attractive for the fabrication of integrated optical waveguides, and as a dielectric material in variety of microelectronic and optoelectronic devices.
The electro-optical properties of SiONC dielectric thin films deposited by polymer-source chemical vapor deposition using an organosilane precursor has been investigated as a function of oxygen concentration in the films. SiONC thin films were characterized using capacitance-voltage (C-V), conductance-voltage (G-V), ellipsometry, and ultraviolet visible (UV-Vis) photospectroscopy. These measurements showed that the electro-optical properties of the films are greatly influenced by the atomic concentration of oxygen. The high frequency C-V measurement revealed a nearly ideal metal-oxide-semiconductor (MOS) structure behavior at high atomic concentration of oxygen (35 at. %). A relative dielectric constant as high as 6 is obtained at 10 kHz for samples with about 5 at. % of oxygen, which corresponds to high-k dielectric material. The interface trap density extracted from G-V measurement using Hill-Coleman method is as low as 3.2×1010 (cm−2 eV−1), making these films a viable high-k dielectric alternative to SiO2 and SiON in MOS devices. The refractive index measured by ellipsometry at a wavelength of 632.8 nm shows a linear variation with atomic concentration of oxygen from 1.58 to 1.69. The optical energy band gap extracted from UV-Vis absorption spectra was found to vary between 4.40 and 5.25 eV.
This paper presents the creation of a template for the interpretation and simulation of second order AA′XX′ NMR-spectra, starting from the core information offered in a regular undergraduate physical chemistry course.
Silicon carbide thin films have been deposited via sublimation of a solid organosilane polymer source using atmospheric pressure chemical vapour deposition process (PS-CVD). The advantages of this new process include high deposition rate, compatibility with batch process, hazard-free working environment and low deposition cost. The silicon carbide (SiC) thin films obtained through this process exhibit a highly uniform film thickness, highly conformal coating, and very high chemical resistance to acids and alkalis solutions. These proven characteristics make the SiC thin films obtained by PSCVD process very attractive as a structural material for micro-electro-mechanical systems (MEMS) and as a coating film in a wide range of other applications. These SiC thin films are also expected to be attractive as a semiconductor material provided that the defects and oxygen contamination can be reduced and efficiently controlled. In this work we have investigated the chemical, structural, electrical and optical properties of these films, using elastic recoil detection (ERD), Fourier transform infrared (FTIR) spectroscopy, photospectroscopy, ellipsometry, and capacitance-voltage measurements.
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