Amorphous silicon carbon nitride (a-SiCN:H) films were synthesized using vapor transport-chemical vapor deposition technique. Poly(dimethylsilane) was used as a single source for both Si and C. NH3 gas diluted in Ar is used as a source for nitrogen. The composition and bonding states are uniquely characterized with respect to NH3/Ar ratio by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy (XPS). Spectral deconvolution is used to extract the individual components of the FTIR and XPS spectra. For instance, the FTIR spectra show a remarkable drop in the intensity of SiC vibration accompanied by the formation of further bonds including SiN, CN, CN, CN, and NH with increasing NH3/Ar ratio. Moreover, the XPS spectra show the existence of different chemical bonds in the a-SiCN:H films such as SiC, SiN, CN, CN, and CC. Both FTIR and XPS data demonstrate that the chemical bonding in the amorphous matrix is more complicated than a collection of single SiC SiN, or SiH bonds.
A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height.
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