Based on its performance metrics, the NanoMonitor has excellent potential for development as a point-of-care handheld electronic biosensor device for routine detection of glycan biomarkers from clinical samples.
A rapid detection test for SARS-CoV-2 is urgently required to monitor virus spread and containment. Here, we describe a test that uses nanoprobes, which are gold nanoparticles functionalized with an aptamer specific to the spike membrane protein of SARS-CoV-2. An enzyme-linked immunosorbent assay confirms aptamer binding with the spike protein on gold surfaces. Protein recognition occurs by adding a coagulant, where nanoprobes with no bound protein agglomerate while those with sufficient bound protein do not. Using plasmon absorbance spectra, the nanoprobes detect 16 nM and higher concentrations of spike protein in phosphate-buffered saline. The time-varying light absorbance is examined at 540 nm to determine the critical coagulant concentration required to agglomerates the nanoprobes, which depends on the protein concentration. This approach detects 3540 genome copies/μl of inactivated SARS-CoV-2.
High sensitivity of the photoluminescence (PL) effect to surface states and chemical reactions on surfaces of PL emitting semiconductors has been attractive in monitoring photo-induced microstructuring of such materials. To address the etching at nano-scale removal rates, we have investigated mechanisms of photocorrosion of GaAs/Al 0.35 Ga 0.65 As heterostructures immersed either in deionized water or aqueous solution of NH 4 OH and excited with abovebandgap radiation. The difference in photocorrosion rates of GaAs and Al 0.35 Ga 0.65 As appeared weakly dependent on the bandgap energy of these materials, and the intensity of an integrated PL signal from GaAs quantum wells or a buried GaAs epitaxial layer was found dominated by the surface states and chemical reactivity of heterostructure surfaces revealed during the photocorrosion process. Under optimized photocorrosion conditions, the method allowed resolving a 1 nm thick GaAs sandwiched between Al 0.35 Ga 0.65 As layers. We demonstrate that this approach can be used as an inexpensive, and simple room temperature tool for post-growth diagnostics of interface locations in PL emitting quantum wells and other nano-heterostructures.
Nanostructuring of semiconductor wafers with an atomic level depth resolution is a challenging task, primarily due to the limited availability of instruments for in situ monitoring of such processes. Conventional digital etching relies on calibration procedures and cumbersome diagnostics applied between or at the end of etching cycles. We have developed a photoluminescence (PL) based process for monitoring in situ digital photocorrosion (DPC) of GaAs/AlGaAs microstructures at rates below 0.2 nm per cycle. In this communication, we demonstrate that DPC of GaAs/AlGaAs microstructures could be monitored with open circuit potential (OCP) measured between the photocorroding surface of a microstructure and an Ag/AgCl reference electrode installed in the sample chamber. The excellent correlation between the position of both PL and OCP maxima indicates that the DPC process could be monitored in situ for materials that do not necessarily exhibit measurable PL emission.
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