A detailed account of the experimental results from optically detected magnetic resonance ͑ODMR͒ studies of grown-in defects in ͑Al͒GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Ga i defects ͑Ga i -A and Ga i -B͒. New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Ga i -B defect was estimated to be deeper than ϳ1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects.

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Light emitting diodes (LEDs) and Si-based metal oxide semiconductor field effect transistors (MOSFETs) were monolithically merged in a single chip which consisted of a Si layer and an InGaPN/GaPN double heterostructure layer lattice-matched to Si grown on a Si substrate by dislocation-free growth process for the first time. The developed fabrication process was conformed to a conventional planar MOSFET process. All LEDs and MOSFETs operated normally. Light emission from the LED was modulated by switching the MOSFET. The growth and fabrication technologies could be effective for realizing monolithic optoelectronic integrated circuits for massively parallel processing and optical interconnections.

Two Ga-interstitial ͑Ga i ͒ defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaN y P 1−y and Al x Ga 1−x N y P 1−y . Characteristic hyperfine structure arising from spin interaction between an unpaired electron and a Ga nucleus is clearly resolved. The observed strong and nearly isotropic hyperfine interaction reveals an electron wave function of A 1 symmetry that is highly localized at the Ga i and thus a deep-level defect. Our analysis based on first-principles calculations suggests that these defects are complexes containing one Ga i 2+ .

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