Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC

Yonezu, Hiroo; Furukawa, Yukio; Abe, Hiroshi; Yoshikawa, Y.; Moon, Soo-Young; Utsumi, Atsushi; Yoshizumi, Yusuke; Wakahara, Akihiro; Ohtani, Masahiro

doi:10.1016/j.optmat.2004.08.002

Cited by 43 publications

(38 citation statements)

References 8 publications

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“…Heteroepitaxial growth of GaAs on Si substrates has attracted much attention due to its many excellent potential for devices of monolithic opto-electronic integrated circuit [1][2][3] and high-efficiency solar cell [4,5]. However, there are inherent difficulties for the preparation of GaAs layer on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Growth process and nanostructure of crystalline GaAs on Si(1 1 0) surface prepared by molecular beam epitaxy

Usui

Ishiji

Yasuda

et al. 2006

Journal of Crystal Growth

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Growth process of crystalline GaAs on Si(1 1 0) surface kept at 773 K and the nanostructural analysis of the interface have been studied by a combination of reflection high-energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) observations. The Si(1 1 0) facetted surface along the /0 0 1S direction consists of vicinal surfaces inclined 721 from the /1 1 0S direction. In earlier stage of the growth up to the coverage of 12 ML, the vicinal facetted surface is filled from the bottom terraces by GaAs layers and consequently a flat surface is constructed. With increasing layer thickness of GaAs, stacking faults and the subsequent deformation twins are introduced to relax the lattice strain accumulated in the layer by themselves. r

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Section: Introductionmentioning

confidence: 99%

Growth process and nanostructure of crystalline GaAs on Si(1 1 0) surface prepared by molecular beam epitaxy

Usui

Ishiji

Yasuda

et al. 2006

Journal of Crystal Growth

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“…Previously, we have fabricated a dislocation-free Si/GaPN/Si structure by molecular beam epitaxy (MBE), where a thin GaP initial layer is formed on Si (001) by migration enhanced epitaxy [9]. We have also demonstrated integration of elemental devices for the monolithic OEICs in a Si/III-V-N/Si structure [10][11][12]. These elemental devices were composed of metal-oxide-semiconductor fieldeffect transistors (MOSFETs) and InGaPN/GaPN double heterostructure (DH) light-emitting diodes (LEDs) on Si epilayer.…”

Section: Introductionmentioning

confidence: 99%

Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Fukami

Umeno

Furukawa

et al. 2010

Phys. Status Solidi (c)

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We develop the design method of luminescence device with the strained quantum dots (QDs) on Si using a theoretical analysis on realistic structure. We have calculated numerically the first electron and heavy‐hole quantum levels of self‐assembled InGaAsN/GaP QDs using the finite element method, the model‐solid theory and the band‐anticrossing model. The calculation results indicate that N incorporation into InGaAs QDs drastically reduces the conduction band minimum (∼120 meV/N at%), and that it is shown enough energy difference between the first electron‐quantum level and GaP X‐state when N composition is 1∼2%. For self‐assembled In0.5Ga0.5As0.99N0.01/GaP QDs, the calculated transition energy at room temperature (RT) nearly matches with the measured photoluminescence (PL) peak energy. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…9,10 Therefore, there is a possibility for integration of GaPN devices with Si devices utilizing the conventional Si technology. 11,12 For design and control of GaPN-based device structures, it is important to understand electrical properties of the GaPN surfaces, including junction characteristics, impurity and/or defect-induced electronic levels, and so on. Although structural and optical properties of GaP 1−x N x have extensively been studied, 7,[13][14][15][16][17][18][19][20][21] there are only a few literatures [22][23][24] on their chemical and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

Kaneko

Hashizume

Odnoblyudov

et al. 2007

Journal of Applied Physics

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We have investigated electrical properties and deep levels of n-GaP1−xNx (x=0%−0.62%) grown on (100) n-GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm−1, originating from alloy disorder or local distortion of the GaP1−xNx lattice. The electrical properties of the GaP1−xNx surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10–1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni∕GaP1−xNx diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84±4 meV in GaP and GaP1−xNx. For the GaP1−xNx samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes.

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Elemental devices, circuits and processes for a monolithic Si/III–V–N alloy OEIC

Cited by 43 publications

References 8 publications

Growth process and nanostructure of crystalline GaAs on Si(1 1 0) surface prepared by molecular beam epitaxy

Growth process and nanostructure of crystalline GaAs on Si(1 1 0) surface prepared by molecular beam epitaxy

Analysis of quantum levels for self‐assembled InGaAsN/GaP quantum dots

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

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