The beneficial use of a hole transport layer (HTL) as a substitution for poly(3,4-ethlyenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is regarded as one of the most important approaches for improving the stability and efficiency of inverted perovskite solar cells. Here, we demonstrate highly efficient and stable inverted perovskite solar cells by applying a GO-doped PEDOT:PSS (PEDOT:GO) film as an HTL. The high performance of this solar cell stems from the excellent optical and electrical properties of the PEDOT:GO film, including a higher electrical conductivity, a higher work function related to the reduced contact barrier between the perovskite layer and the PEDOT:GO layer, enhanced crystallinity of the perovskite crystal, and suppressed leakage current. Moreover, the device with the PEDOT:GO layer showed excellent long-term stability in ambient air conditions. Thus, the enhancement in the efficiency and the excellent stability of inverted perovskite solar cells are promising for the eventual commercialization of perovskite optoelectronic devices.

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The microstructure and corrosion behavior of the extruded ZK60 Mg alloys with different Cu content were comparatively investigated. The ZK60 alloy had a microstructure consisting of α-Mg grains with intermetallic MgZn 2 and Zn 2 Zr 3 particles. The addition of 1 wt % Cu resulted in the additional presence of CuMgZn particles. In a 0.6 M NaCl solution at 25 • C, the corrosion rate of the alloy with the added Cu appeared to be about 16% faster than that of the alloy without the addition of Cu. The factors affecting the degraded corrosion resistance of the Cu-added ZK60 alloy are discussed.