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The recent progress of selector and self-rectifying devices for resistive randomaccess memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

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In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La2O3) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La2O3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La2O3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott–Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n‐type semiconducting nature of the fabricated La2O3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio‐synaptic properties such as potentiation‐depression, excitatory post‐synaptic currents, and paired‐pulse facilitation. It is demonstrated that the fabricated devices are non‐ideal memristors based on double‐valued charge‐flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary‐based RS mechanism is suggested. The present results assert that La2O3 is a promising solid electrolyte for memory and brain‐inspired applications.

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