Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application

Abstract

The recent progress of selector and self-rectifying devices for resistive randomaccess memory applications is reviewed. In particular, the performance of crossbar arrays based on resistive switching (RS) devices, the sneak-path current issue, and possible solutions is discussed. The parameters and requirements of selector devices are elucidated here, and several types of selector devices, such as a transistor-assisted transistor-one resistor, unipolar one diode-one resistor, bipolar one selector-one resistor, and threshold switching selectors, are comprehensively discussed. In the case of self-rectifying devices, the recent progress in complementary RS devices, vacancy-modulated conductive oxide-based devices, and tunneling barrier-based RS devices is reviewed. The switching mechanisms and the geometrical configuration of the selector and self-rectifying RS devices are emphasized. Furthermore, comparative assessments of the different devices are evaluated. Finally, an overview of the gaps in previously reported devices is presented and some key improvements for future research direction suggested.

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

“…When an external electric field is applied to the device, the Ag electrode oxidizes and produces Ag + ions (Ag → Ag + + e – ) that migrate to the Pt bottom electrode. After reaching the Pt bottom electrode, the Ag+ ions are reduced to Ag atoms and one or more broad conductive filaments are established . Furthermore, the boron vacancies are transported toward the Ag top electrode owing to their net negative charge and participate in the formation of conductive filaments.…”

“…After reaching the Pt bottom electrode, the Ag+ ions are reduced to Ag atoms and one or more broad conductive filaments are established. 58 Furthermore, the boron vacancies are transported toward the Ag top electrode owing to their net negative charge 59 and participate in the formation of conductive filaments. As the applied CC is increased from 5 μA to 5 mA, the concentrated/wider conducting filaments attempted to grow in the device (Figure 4d−g).…”

Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse

“…[35] The has normally been linked with the Schottky barrier at the electrode/electrolyte interface. [36] For example, self-rectifying behavior was also reported in a Cu/Al 2 O 3 /a-Si/Ta resistive memory where the non-linearity observed on the device I-V characteristic was ascribed to the effective Schottky barrier height at the electrode/ aSi interface. [37] The self-rectifying behavior in this work could be attributed to the rectifying property of the Schottky barrier at the SiC/W interface.…”

Neuromorphic devices based on fluorite‐structured ferroelectrics

“…Because FTJs require both directions of bias for resistance state variation, only bidirectional selectors are suitable. It has been demonstrated that these selector devices successfully suppress sneak current with a high rectifying ratio (>10 5 ), which is the current ratio of LRS at the read voltage and the opposite direction of the read voltage 142–146 . However, implementing external selectors can degrade the advantages of array configuration and integration density.…”