Precursor-dependent resistive switching properties of nanostructured g-C3N4: statistical and experimental investigations

Patil, Snehal L.; Redekar, R.S.; Pawar, Omkar Y.; Kundale, Somnath S.; Sutar, Santosh S.; More, Krantiveer V.; Chavan, Vijay D.; Kim, Deok‐kee; Dongale, Tukaram D.; Tarwal, N.L.

doi:10.1007/s10854-022-09436-7

Cited by 15 publications

(10 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the device switches from HRS to LRS (SET/turn on) [39]. The adjacent R 2 values of all fitted plots are ∼0.99, suggesting that the proposed model is fit the I-V data very well [40,41]. A potential filamentary RS mechanism for an Ag/NFO/FTO memristive device is depicted in figure 6.…”

Section: Resultsmentioning

confidence: 85%

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

Patil,

Nikam,

Teli

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The existing work addresses the chemical synthesis of NiFe2O4 (NFO) nanoparticles (NPs) with the help of PVP as a capping agent and NiFe2O4 NPs are used as a switching layer material in memory device. For the confirmation of the materials phase, composition, and optical properties, various analytical techniques were used. By the support of the X-ray diffraction (XRD) technique, crystal structure (cubic spinel) and crystallite size (20.12 nm) were determined. Field emission scanning electron microscopy (FE-SEM) was used to confirm the material morphology. Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FT-IR) were applied to identify the of NiFe2O4 NPs functional groups. For the non-volatile memory device , Ag/NFO/FTO was fabricated, which shows bipolar resistive switching with good endurance (104 cycles) and retention (6 x 103 s). The I–V characteristics of the actual device indicates that the deposition order of the film is a decisive part in the device performance. Moreover, the conduction and resistive switching mechanism of the device were also carried out.

show abstract

Section: Resultsmentioning

confidence: 85%

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

Patil,

Nikam,

Teli

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…In addition, the present case includes the time series analysis (TSA) model to predict and forecast the chronoamperometric stability beyond 800 s for the optimized ZC-0.1/CH 3 –Cu-BTC NC-based photoanode. TSA is an important statistical technique that can be used for the modeling, prediction, and forecasting of electronic devices. , At the outset, the present work has used the Dickey-Fuller (ADF) test to check the stationarity in the time series. , The value of the ADF test along with the p -value is found to be −9.1556 (0.01), and it implies that the present time series of the ZC-0.1/CH 3 –Cu-BTC NC-based photoanode is stationary. To model, predict, and forecast the chronoamperometric stability of the ZC-0.1/CH 3 –Cu-BTC NC-based photoanode, we used the Holt-Winters exponential smoothing (HWES) technique.…”

Section: Resultsmentioning

confidence: 93%

“…62,63 At the outset, the present work has used the Dickey-Fuller (ADF) test to check the stationarity in the time series. 64,65 The value of the ADF test along with the p-value is found to be…”

Section: Resultsmentioning

confidence: 99%

ZnO Nanorod/Multiwalled Carbon Nanotube Composites Sensitized with Cu-Based Metal–Organic Frameworks as Photoanodes for Solar-Driven Water Splitting

Koyale,

Kulkarni,

Gunjakar

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

This research investigates the photoelectrochemical (PEC) water splitting capabilities of Cu-based metal−organic framework (MOF)-sensitized one-dimensional (1D) metal oxide nanostructures, specifically zinc oxide (ZnO) nanorod (NR)/ multiwalled carbon nanotube (MWCNT) nanocomposites (ZC NCs). This study involves the synthesis of ZnO NRs as well as ZC NCs with varying content of MWCNTs (from 0.05 to 0.25 wt %) via the sol−gel technique, followed by a comprehensive analysis of their structural, optical, and surface properties. The incorporation of MWCNTs with ZnO revealed the enhanced optical and surface characteristics and high concentration of oxygen vacancies in ZC NCs as evidenced by electron spin resonance (ESR) analysis, contributing to improved PEC performance. Thereafter, binder-free thin films of the synthesized materials were deposited using the doctor-blade technique, and then, PEC water splitting performance was assessed through various electrochemical techniques. Herein, the PEC performance of ZC-0.1 NCs (with 0.1 wt % MWCNTs) was 4.5 times superior to that of bare ZnO NRs. Subsequently, the optimized ZC-0.1 NCs were further sensitized with CH 3 −Cu-BTC MOFs, forming ternary ZC-0.1/CH 3 −Cu-BTC NCs. For these ternary NCs, an impressive current density was observed (2.57 mA/cm 2 ), nearly 9 times greater than that of pristine ZnO NRs (1.23 V) vs the reversible hydrogen electrode (RHE) and almost double that of ZC-0.1 NCs. Furthermore, the designed photoanode is stable over time, which was predicted and forecasted through the time series analysis (TSA) model. The higher PEC performance for ternary NCs was justified through surface topography, morphological, and contact angle studies to analyze the surface nature and its hydrophilicity. Hence, the present work demonstrates the systematic roadmap for a PEC water splitting study using valuable insights for the design and optimization of nanostructured metal oxides, photoactive organic moieties, and their composites.

show abstract

“…Overall device performance is decided by many factors; however, the active switching layer is one of the major aspects of all. In recent years, our research group actively engaged in a synthesizing variety of switching layer materials by using different synthesis techniques for nonvolatile memory and neuromorphic computing applications. ,,− ,− There are three main categories of nanomaterial/thin film synthesis viz. physical, chemical, and biological methods.…”

Section: Synthesis and Deposition Methods For Rs Devicesmentioning

confidence: 99%

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Kamble

Patil

Kamat

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

show abstract

Precursor-dependent resistive switching properties of nanostructured g-C3N4: statistical and experimental investigations

Cited by 15 publications

References 51 publications

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

ZnO Nanorod/Multiwalled Carbon Nanotube Composites Sensitized with Cu-Based Metal–Organic Frameworks as Photoanodes for Solar-Driven Water Splitting

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Contact Info

Product

Resources

About

Precursor-dependent resistive switching properties of nanostructured g-C3N4: statistical and experimental investigations

Cited by 15 publications

References 51 publications

NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

NiFe2O4 nanoparticles for non-volatile bipolar resistive switching memory device

ZnO Nanorod/Multiwalled Carbon Nanotube Composites Sensitized with Cu-Based Metal–Organic Frameworks as Photoanodes for Solar-Driven Water Splitting

Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Contact Info

Product

Resources

About

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device

NiFe₂O₄ nanoparticles for non-volatile bipolar resistive switching memory device