The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 1018 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR.
Chip-scale, tunable narrow-linewidth hybrid integrated diode lasers based on quantum-dot RSOAs at 1.3 μm are demonstrated through butt-coupling to a silicon nitride photonic integrated circuit. The hybrid laser linewidth is around 85 kHz, and the tuning range is around 47 nm. Then, a fully integrated beam steerer is demonstrated by combining the tunable diode laser with a waveguide surface grating. Our system can provide beam steering of 4.1° in one direction by tuning the wavelength of the hybrid laser. Besides, a wavelength-tunable triple-band hybrid laser system working at
∼
1
,
∼
1.3
, and
∼
1.55
μm
bands is demonstrated for wide-angle beam steering in a single chip.
To achieve a high-power single-transverse mode laser, we here propose a supersymmetry-based triple-ridge waveguide semiconductor laser structure, which is composed of an electrically pumped main broad-ridge waveguide located in the middle and a pair of lossy auxiliary partner waveguides. The auxiliary partner waveguides are designed to provide dissipative modes that can phase match and couple with the higher-order modes in the main waveguide. By appropriately manipulating the gain–loss discrimination of the modes in the laser cavity, one can effectively suppress all the undesired higher-order transverse modes while keeping the fundamental one almost unaffected, thereby ensuring stable single-mode operation with a larger emitting aperture and accordingly a higher output power than a conventional single-transverse-mode ridge waveguide diode laser.
This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength (1-λ) optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from 18.07to12.21ns, was obtained. The corresponding modulation frequency can be increased from 19.54to30.21MHz.
The basic principle and method to generate structural color from the photoresist grating of the multilayer dielectric diffraction grating are introduced. Rigorous coupled-wave analysis is used for computation with the open software RCWA-1D. The relationships between the characteristics of the photoresist and the structural color are explained. This paper discusses the effect of light source characteristics on the duty cycle color resolution, indicating that TE polarization is better than TM polarization, and the FWHM should be sufficiently large with an optimized value for the incident angle.
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