To achieve a high-power single-transverse mode laser, we here propose a supersymmetry-based triple-ridge waveguide semiconductor laser structure, which is composed of an electrically pumped main broad-ridge waveguide located in the middle and a pair of lossy auxiliary partner waveguides. The auxiliary partner waveguides are designed to provide dissipative modes that can phase match and couple with the higher-order modes in the main waveguide. By appropriately manipulating the gain–loss discrimination of the modes in the laser cavity, one can effectively suppress all the undesired higher-order transverse modes while keeping the fundamental one almost unaffected, thereby ensuring stable single-mode operation with a larger emitting aperture and accordingly a higher output power than a conventional single-transverse-mode ridge waveguide diode laser.
In this Letter, we have demonstrated wavelength beam combining (WBC) through hybrid integration of photonic integrated circuits (PICs) to significantly reduce the size, weight, and operation power of the laser combining system. The hybrid integration WBC includes III/V semiconductor optical amplifiers (SOAs), which provide gain, and the silicon nitride PICs, which perform as the external cavity. We first show that the arrayed waveguide grating (AWG) -based hybrid laser defines the lasing wavelength through the AWG passband. We then demonstrate that the AWG successfully forms multiple channel lasers by combining SOAs in the hybrid platform.
Scaling up the power of on-chip diode lasers is of great importance for many emerging applications, such as integrated nonlinear optics, remote sensing, free space communication, infrared countermeasure, and light detection and ranging (LIDAR). In this manuscript, we introduce and demonstrate photonic integrated circuits (PIC) based beam combining methods to create power scalable, integrated direct diode laser systems. Traditional laser beam combining, including coherent beam combining (CBC) and wavelength beam combining (WBC), usually requires free space or fiber optical components, leading to bulky and complex systems. Instead, PIC based beam combining methods can greatly reduce the cost, size, weight, and power consumption (CSWaP) of next generation direct diode laser systems. We experimentally demonstrate four channel chip-scale CBC and WBC with watt-level on-chip power by using III/V-Si3N4 hybrid integration. Our results show that PIC based beam combining is very suitable for power scaling in a chip-scale platform.
An on-chip FIRE resonator, consisting of an angled laser array monolithically integrated with a slab waveguide propagation region, is experimentally demonstrated for coherent beam combining with the increased supermode discrimination and reduced edge losses.
We demonstrate a unidirectional ring diode laser based on hybrid integration of a hook-shaped traveling-wave semiconductor optical amplifier (SOA) and a Taiji ring resonator. The additional crossover bending waveguide inside the silicon nitride Taiji ring introduces a non-reciprocal loss in the laser cavity while the gain is provided by a multiple depth etched hook-shaped SOA. We present the detailed design flow for both active and passive components of the unidirectional hybrid diode laser. This work paves the way to use a hook-shaped SOA-based hybrid platform for various applications including optical sensing, all-optical switching, photonic memories, and topological optics.
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