An eco-friendly biodegradable starch paper is introduced for use in nextgeneration disposable organic electronics without the need for a planarizing layer. The starch papers are formed by starch gelatinization using a very small amount of 0.5 wt% polyvinyl alcohol (PVA), a polymer that bound to the starch, and 5 wt% of a crosslinker that bound to the PVA to improve mechanical properties. This process minimizes the additions of synthetic materials. The resultant starch paper provides a remarkable mechanical strength and stability under repeated movements. Robustness tests using various chemical solvents are conducted by immersing the starch paper for 6 h. Excellent nonpolar solvent stabilities are observed. They are important for the manufacture of organic electronics that use nonpolar solution processes. The applicability of the starch paper as a flexible substrate is tested by fabricating flexible organic transistors using pentacene, dinaphtho[2,3-b:2′,3′-f ]thieno[3,2-b]thiophene, and poly(dimethyltriarylamine) using both vacuum and solution processes. Electrically well-behaved device performances are identified. Finally, the eco-friendly biodegradability is verified by subjecting the starch paper to complete degradation by fungi in fishbowl water over 24 d. These developments illuminate new research areas in the field of biodegradable green electronics, enabling the development of extremely low-cost electronics.

Wrinkled elastomeric templates prepared by stretching and releasing are utilized for demonstrating highly sensitive, simple, and low-cost piezocapacitive pressure sensors over large area.

Charge traps in polymer gate dielectrics determine the electrical stability of organic field-effect transistors (OFETs), and polar alkoxy groups are well-known extrinsic charge traps. However, the actual location of intrinsic charge traps in nonpolar polymer gate dielectrics has been poorly understood yet. Here, we demonstrate that the skeletal structure of polymer chain plays an important role in determining the electrical stability. To verify it, we prepared linear and branched polystyrene (l-PS and b-PS) and blended them, in which branched segments provide much larger free volume than the other segments. The current-insulating performance and field-effect mobility increased with decease of b-PS portion. In particular, the bias-stress stability was remarkably varied according to the change of b-PS portion even though all measurements excluded reactive components such as oxygen and water; the increase of b-PS resulted in time-dependent decay of mobility and threshold voltage under bias stress. This indicates that the branched segments in b-PS provide intrinsic and metastable charge trap sites. Our result suggests that the skeletal structure of polymeric chains in gate dielectric is one of the important factors affecting intrinsic long-term operational stability of OFET devices.

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm V s, more than a factor of 2 higher than the mobility of 0.25 cm V s submitted to conventional thermal annealing and the mobility of 0.29 cm V s from the horizontally applied temperature gradient.

The preparation of uniform large-area highly crystalline organic semiconductor single crystals remains a challenge in the field of organic field-effect transistors (OFETs). Crystal densities in the channel regions of OFETs have not yet reached sufficiently high values to provide efficient charge transport, and improving channel crystal densities remains an important research area. Herein we fabricated densely well-aligned single crystal arrays of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS_PEN) semiconductor using a straightforward scooping-up (SU) methodology to quickly produce a large-area self-assembled semiconductor crystal layer. The resulting crystalline TIPS_PEN strip arrays obtained using the SU method revealed a packing density that was 2.76 times the value obtained from the dip-coated channel, and the mean interspatial distance between the crystal strips decreased from 21.5 to 7.8 μm. The higher crystal packing density provided efficient charge transport in the FET devices and directly yielded field-effect mobilities as high as 2.16 cm(2)/(V s). These field-effect mobilities were more than three times the values obtained from the OFETs prepared using dip-coated channels. Furthermore, the contact resistance between the source/drain electrodes and the TIPS_PEN crystals decreased by a factor of 2. These contributions represent a significant step forward in improving semiconductor crystal alignment for the fabrication of large-area high-performance organic electronics.