A three-dimensional ordered and self-organized semiconductor system emitting highlypolarized light in the yellow-orange visible range (580-650 nm) is presented, comprising selfassembled in-plane AlInP wires vertically stacked in regularly-spaced columns. More than 200 wires per column without detectable defect formation could be stacked. Theoretical simulations and temperature-dependent photoluminescence provided a benchmark to engineer multilayered structures showing internal quantum efficiency at room temperature larger than comparable quantum wells emitting at similar wavelengths. Finally, proof-ofconcept light emitting diodes (LED) showed a high degree of light polarization and lower surface parasitic currents than comparable quantum well LEDs, providing an interesting perspective for high-efficiency polarized yellow-orange light emitting devices.
Abstract-The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing longwavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 µm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 µm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InPbased devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAsbased long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.
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