Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers

Bogusevschi, Silviu; Broderick, Christopher A.; O’Reilly, Eoin P.

doi:10.1109/jqe.2015.2507590

Cited by 7 publications

(16 citation statements)

References 35 publications

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“…This has been motivated by the superior properties of GaAs, as well as the potential to exploit vertical-cavity architectures. While these approaches have enjoyed some success, their associated limitations have prevented widespread adoption for practical applications: the development of QD devices has been constrained by the difficulty to grow uniform, high density QDs, while metamorphic and dilute nitride devices suffer from defect-related recombination and are largely limited to wavelengths ≲1.55 μ m 13 14 .…”

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confidence: 99%

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Broderick

Jin

Marko

et al. 2017

Sci Rep

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The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.

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confidence: 99%

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Broderick

Jin

Marko

et al. 2017

Sci Rep

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“…This suggests that significant reductions in J th can be expected to result from refinements in the growth of metamorphic heterostructures, but at the cost of also reducing T 0 . Our analysis also indicates that optimised 1.3 and 1.55 µm lasers grown on InGaAs MBLs require a small number of QWs, typically 3, which is lower by approximately a factor of two than the number required in InP-based devices operating at the same wavelengths [5].…”

Section: Resultsmentioning

confidence: 69%

“…Secondly, we have (i) calculated the properties of a series of 1.3 and 1.55 µm metamorphic laser structures, and (ii) identified optimised laser structures having low J th and high dg dn . Our calculations indicate that optimised metamorphic laser structures have the potential to offer (i) threshold current densities (differential gains) which are lower (higher) than those than can be obtained in InP-based devices at the same wavelengths, and (ii) high differential gains equivalent to those that one would expect to obtain in InGaAs QWs grown on GaAs substrates [5]. Further analysis has indicated that the performance of these laser structures is, in part, governed by a trade-off between the carrier and optical confinement, which can be engineered in order to optimise the threshold characteristics through incorporation of Al in the barrier layers to form structures consisting of compressively strained InGaAs QWs and quaternary AlInGaAs barriers.…”

Section: Resultsmentioning

confidence: 84%

“…We note that InGaAs MBLs having In compositions 20% allow for 1.3 and 1.55 µm emission in InGaAs QWs having strains 2%, so that it should be possible to obtain high-quality strained QWs using this growth platform. Further analysis of the band structure of strained AlInGaAs quaternary alloys suggests that the permissible growth combinations for 1.3 and 1.55 µm metamorphic laser structures are compressively strained ternary InGaAs QWs, having unstrained or tensile strained ternary or quaternary (Al)InGaAs barriers [5]. Secondly, we have (i) calculated the properties of a series of 1.3 and 1.55 µm metamorphic laser structures, and (ii) identified optimised laser structures having low J th and high dg dn .…”

Section: Resultsmentioning

confidence: 99%

“…We then identify optimised laser structures by varying the alloy composition, strain and QW thickness in order to optimise the device performance by respectively minimising and maximising J th and dg dn , thereby identifying efficient devices that offer high-speed performance at low injection currents [5].…”

Section: Theoretical Modelmentioning

confidence: 99%

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Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Broderick

Bogusevschi

O’Reilly

2016

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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Abstract-The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing longwavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 µm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 µm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InPbased devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAsbased long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.

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Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

Mura

Gocalinska

O'Brien

et al. 2021

Crystal Growth & Design

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We investigated and demonstrated a 1.3 µm-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded InxGa1-xAs buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and InGaP alloys in a superlattice sequence. This was implemented to overcome (previously unreported) detrimental surface epitaxial dynamics and instabilities: when single alloys are utilised to achieve thick layers on metamorphic structures, surface instabilities induce defect generation. This has represented a historically limiting factor for metamorphic lasers by MOVPE. We describe a number of alternative strategies to achieve smooth surface morphology to obtain efficient compressively strained In0.4Ga0.6As quantum wells in the active layer. The resulting lasers exhibited low lasing threshold with total slope efficiency of 0.34 W/A for a 500 µm long ridge waveguide device. The emission wavelength is extended as far as 1360 nm.

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Theory and Optimization of 1.3- $\mu \text{m}$ Metamorphic Quantum Well Lasers

Cited by 7 publications

References 35 publications

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Theory and optimisation of 1.3 and 1.55 μm (Al)InGaAs metamorphic quantum well lasers

Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

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