In the present study, we report a simple method to prepare indium­(III) selenide (In2Se3) nanocubes synthesized by laser ablation in aqueous medium. The morphological characterization carried out using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) reveal that the nanocubes have an average size of 70 nm. X-ray diffraction and Raman analysis clearly imply formation of pure and crystalline In2Se3 phases only, without any impurity phases, despite laser ablation being carried out in aqueous medium. In addition, the field emission and charge carrier behavior of In2Se3 nanocubes have been investigated. The laser-ablated sample shows a cubical morphology having a 70 nm average particle size. The ultrafast transient absorption spectroscopy (UTAS) suggests the slow decay behavior of charge carriers and an increase in the trap state levels after laser ablation, in contrast to the untreated bulk sample. Surprisingly, the In2Se3 nanocubes on a carbon tape emitter exhibits superior FE properties characterized by lower values of turn-on and threshold fields as compared to In2Se3 nanowire emitters and the ability to deliver very large current density ∼2656 μA/cm2 by applying a field of 9.7 V/μm. Furthermore, the In2Se3 nanocube emitter showed very good emission stability at the pre-set value 10 μA over a duration of 5 h. The superior FE characteristics of the In2Se3 nanocube emitter is attributed to unique morphology characterized by nanometric cubes and improved electrical properties, as revealed by UTAS analysis. The observed results imply the potential of In2Se3 nanocube emitters for practical applications in vacuum nano-microelectronic devices.

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We report a simple method to prepare indium(III) selenide (In2Se3) nanocubes by means of laser ablation in aqueous medium. The morphological characterization revealed that the nanocubes have an average size of 70 nm and XRD and micro-Raman analysis revealed that there was no phase change upon laser ablation The detailed study on ultrafast charge carrier dynamis of In2Se3 nanocubes have been performed comparing with that of bulk In2Se3 before laser ablation treatment. The density increase in intermediate trap states upon laser ablation was clarified, in which carriers have a long lifetime near the conduction band [1]. Furthermore, by making hybrid structures using plasmonic gold nanoparticles and metal oxide semiconductors based on hydrothermal process and laser ablation in the liquid method, we could prolong carrier lifetime and enhance photocatalytic reactivity under visible light irradiation. Detailed charge transfer dynamics regarding the electron transfer time and energy relaxation across the nano-interfaces will be presented. Reference 1. Siddhant Dhongade, Pallavi R. Mutadak, Amol B. Deore, Mahendra A. More, Akihiro Furube, and Pankaj Koinkar, ACS Appl. Nano Mater. 2020, 3, 9749−9758

The interest toward two-dimensional (2D) materials is gradually increasing because of their structure at nanoscale and great importance for electronic and optical applications. In this study, we show the synthesis of graphene oxide (GO) micro-ribbons fabricated by chemical assisted-laser ablation method. In order to confirm the formation of GO, UV-visible spectroscopy (UV-vis) and Raman spectroscopy are used to observe the surface morphological feature and structural details. In addition, a possible mechanism for the growth of GO nanoribbon is discussed. This work indicates a new method to develop GO nanostructures and related nanomaterials.