Controlled gold nanoparticle (AuNP)-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers. The memory device had the following configuration: n+Si gate/SiO2 blocking oxide/polyelectrolytes/AuNP/PMMA tunneling dielectric layer/Au source-drain. According to the programming/erasing operations, the memory device showed good programmable memory characteristics with a large memory window. In addition, good reliability was confirmed by the data retention characteristics. The fabrication procedures for the charge trapping and tunneling layers were based on simple solution processes (by dipping and spin-coating) and the maximum processing temperature was <100 °C, so this method has potential applications in plastic/flexible electronics.

Nanoscale resistive switching memory cells with controlled cell sizes in the range of 25 to 90 nm were successfully fabricated using anodized aluminum oxide templates, and their electrical properties were directly measured using a conductive atomic force microscope. The size of the memory cells was systematically controlled by controlling the pore size of the nanoscale masks. The devices exhibited controllable and reliable resistive switching characteristics suitable for programmable memory applications. The reported approach provides new opportunities for the preparation of nanostructured nonvolatile memory devices with continued device scaling.

Organic nanofloating gate memory devices were developed based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors (TFTs) embedding gold nanoparticles. The programming/erasing operations showed that the organic memory devices exhibited good programmable memory characteristics that resulted in a gate-voltage controlled reliable threshold voltage shift of the programmed/erased states. The data retention and endurance measurements also showed the reliable nonvolatile memory properties. Solution processes were used for synthesis of the charge trapping elements and TIPS-pentacene TFTs were made by the ink-jet printing technique at low temperatures. Therefore, these processes can readily be adopted in all-printed organic memory devices on flexible substrates.