Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

Kim, Soojin; Park, Young-Su; Lyu, Si-Hoon; Lee, Jang‐Sik

doi:10.1063/1.3297878

Cited by 97 publications

(57 citation statements)

References 25 publications

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“…Their group also reported the use of PMMA as the tunnelling dielectric layer (Fig. 7a) [56]. In that case, a very large memory window (~34 V) was obtained (Fig.…”

Section: Mos Field-effect Transistor-type Memory Devicesmentioning

confidence: 96%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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“…Their group also reported the use of PMMA as the tunnelling dielectric layer (Fig. 7a) [56]. In that case, a very large memory window (~34 V) was obtained (Fig.…”

Section: Mos Field-effect Transistor-type Memory Devicesmentioning

confidence: 96%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…2 Organic materials have received much attention due to their flexibility, ease of production, and low cost. [3][4][5][6][7][8] Those materials have applications in different fields such as organic solar cells, 5 organic light-emitting diodes (OLEDs), 6 sensors, and organic thin-film transistors (OTFTs). 3,7,8 Investigations on organic memory devices were established in the late 1950s; however, further experimental and theoretical studies are still needed to enhance their efficiency.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nejm

Ayesh

Zeze

et al. 2015

Journal of Elec Materi

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We report on the fabrication and characterization of hybrid-organic memory devices based on gold (Au) nanoparticles that utilize metal-insulator-semiconductor structure. Au nanoparticles were produced by sputtering and inertgas condensation inside an ultrahigh-vacuum compatible system. The nanoparticles were self-assembled on a silicon dioxide (SiO 2 )/silicon (Si) substrate, then coated with a poly(methyl methacrylate) (PMMA) insulating layer. Aluminum (Al) electrodes were deposited by thermal evaporation on the Si substrate and the PMMA layer to create a capacitor. The nanoparticles worked as charge storage elements, while the PMMA is the capacitor insulator. The capacitance-voltage (C-V) characteristics of the fabricated devices showed a clockwise hysteresis with a memory window of 3.4 V, indicative of electron injection from the top Al electrode through the PMMA layer into Au nanoparticles. Charge retention was measured at the stress voltage, demonstrating that the devices retain 94% of the charge stored after 3 h of continuous testing.

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“…A self-assembled multilayer of polyelectrolytes, together with a thin spin-coated poly(4-vinyl phenol) (PVP) layer, covers the gold nanoparticles and separates them from the poly(3-hexylthiophene) (P3HT) channel. The memory transistor has an on/off ratio of over 1500 and a data retention time of about 200 s. Recently, Kim et al used PMMA as a tunneling dielectric layer; the resulting memory devices exhibited a maximum memory window of 34 V with a programming voltage of 80 V [24]. The data retention measurements suggested that the memory properties could be maintained for more than 1 year.…”

Section: Floating Gate Ofet Memorymentioning

confidence: 94%

Nonvolatile memory devices based on organic field-effect transistors

Wang

Peng

et al. 2011

Chin. Sci. Bull.

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Among the many possible device configurations for organic memory devices, organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight, low-cost, flexible charge storage media. In this feature article, the recent progress in the classes of OFET-based memory, including floating gate OFET memory, polymer electret OFET memory, ferroelectric OFET memory and several other kinds of OFET memories with unique configurations, are introduced. Finally, the prospects and problems of OFETs memory are discussed. for realization of organic memory because of its nondestructive read-out, complementary integrated circuit architectural compatibility, and single transistor realization [19]. Recently, Sekitani et al. fabricated nonvolatile memory arrays containing 676 organic floating-gate transistors arranged in a 26×26 grid on a plastic film with a thickness of 125 μm that can withstand more than 1000 program/erase cycles [20]. Guo et al. reported OFET multibit storage devices based on pentacene or copper phthalocyaine (CuPc), which were fabricated using polystyrene (PS) or polymethylmethacrylate (PMMA) modified SiO 2 as dielectric layer through light-assisted programs [21]. The devices showed excellent multibit storage ability and the retention times were more than 250 h. Both of these were examples significantly progress the research of OFET memory. Although the performance of OFET memory is still not comparable with that of other types of organic memories or silicon counterparts, they show tremendous potential for future applications. In this feature article, we review the recent progress in classes of OFET-based memory including floating gate, polymer electret, ferroelectric and several other types of OFET memories with unique configurations.

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Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

Cited by 97 publications

References 25 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Electrical Characteristics of Hybrid-Organic Memory Devices Based on Au Nanoparticles

Nonvolatile memory devices based on organic field-effect transistors

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